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CGH55015F2

Wolfspeed

CGH55015F2 by Wolfspeed

CGH55015F2 by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C Band applications. It features a Gallium Nitride transistor element and operates in Enhancement Mode. This single configuration FET has a ceramic, metal-sealed co-fired package body and gold nickel terminal finish for surface mount use.

Median Price

$147.870

Lifecycle Status

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5

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< 1k

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DigiKey

USA . 95 parts In-Stock

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$147.870

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$116.054

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Mouser Electronics

USA . 81 parts In-Stock

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$147.870

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Richardson RFPD

USA . 2 parts In-Stock

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$99.240

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Chip Stock

USA . 224 parts In-Stock

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Lantek

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Perfect Parts

USA . 66 parts In-Stock

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Overview

The Wolfspeed CGH55015F2 RF Power Field Effect Transistor (FET) is a game-changer in the world of amplifiers, offering unparalleled performance and reliability. With a focus on innovation and quality, Wolfspeed has solidified its reputation as a leader in the industry, making the CGH55015F2 a top choice for professionals seeking cutting-edge technology. This N-CHANNEL FET boasts a high electron mobility Gallium Nitride element material, ensuring optimal efficiency and power output. Ideal for applications in the C band frequency range, this enhancement mode transistor provides customers with unmatched value and performance, setting a new standard in amplifier technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides high reliability and thermal performance, making the product suitable for demanding applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have higher electron mobility, offering better efficiency and performance in amplification applications.

Configuration: SINGLE

The single configuration simplifies the design and allows for easier integration into circuits, reducing overall complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Minimum DS Breakdown Voltage: 120 V

The high breakdown voltage ensures reliable operation and protection against voltage spikes or surges.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy mounting on PCBs or in enclosures.

Terminal Form: FLAT

Flat terminal form provides stable and secure connections for proper functionality and reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control and efficiency in amplification tasks, enhancing overall performance.

Highest Frequency Band: C BAND

Designed for operation in the C-band frequency range, suitable for a wide range of RF applications including satellite communication and radar systems.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and integration of the FET in circuits, reducing complexity and potential points of failure.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mechanical mounting and easy installation in various systems or devices.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology provides better performance and efficiency, making the FET suitable for high-frequency applications.

Transistor Element Material: GALLIUM NITRIDE

Gallium nitride material offers superior power handling capabilities, high breakdown voltage, and better thermal conductivity for improved overall performance.

Terminal Finish: GOLD NICKEL

Gold nickel terminal finish ensures good conductivity, corrosion resistance, and reliable connections, enhancing the longevity and performance of the FET.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connection options, allowing for versatile applications and configurations.

Case Connection: SOURCE

Source connection for better heat dissipation and thermal management, ensuring stable operation and reliability in high-power applications.

Technical Specifications

RF Power Field Effect Transistors (FET) CGH55015F2 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

120 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

GOLD NICKEL

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CGH55015F2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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