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SDINBDG4-8G-I1T

Western Digital

SDINBDG4-8G-I1T by Western Digital

Western Digital's SDINBDG4-8G-I1T is a 8GX8 MLC NAND flash memory with 8589934592 words capacity. It operates at 200 MHz clock frequency, has 3000 Write/Erase cycles endurance, and supports parallel programming. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

$8.930

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$8.930

100+ parts

-

1k+ parts

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10k+ parts

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100

$8.930

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Vyrian

USA . 111 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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111

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 255 parts In-Stock

1+ parts

$8.432

100+ parts

-

1k+ parts

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10k+ parts

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255

$8.432

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$8.751

100+ parts

-

1k+ parts

$8.401

10k+ parts

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2,000

$8.751

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$8.401

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Overview

Experience lightning-fast data transfer speeds and reliable storage with the SDINBDG4-8G-I1T by Western Digital. As a leading manufacturer in the flash memory category, Western Digital guarantees top-notch quality and performance. Whether you're a professional photographer needing to store high-resolution images or a gamer looking to enhance load times, this product offers unparalleled value with its endurance of 3000 write/erase cycles and impressive memory density. Elevate your digital experience with Western Digital's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications without adding unnecessary weight.

Surface Mount: YES

Surface mount technology allows for easy installation and compact design, saving space in electronic devices.

Organizati8GX8

With an organization of 8GX8, this flash memory provides high storage capacity and performance for data storage and retrieval.

Maximum Clock Frequency (fCLK): 200 MHz

The high clock frequency enables fast data transfer and processing, improving overall system performance.

Endurance: 3000 Write/Erase Cycles

With a high endurance rating, this flash memory can withstand frequent data write and erase cycles, ensuring reliability and longevity.

Technical Specifications

Flash Memory SDINBDG4-8G-I1T attributes and parameters. Explore more Flash Memory devices from Western Digital

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

1

Endurance:

3000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

SDINBDG4-8G-I1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Western Digital

Western Digital has long been at the forefront of game changing innovations. From the invention of the first hard drive to recent advancements in 3D NAND our journey of innovation continues to inspire those who dare to think big. Wherever you are, Western Digital is with you every step of the way. We are always at the cusp of innovation, pushing the boundaries of technology to make what you thought was once impossible, possible.

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