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SUM70040E-GE3

Vishay Intertechnology

SUM70040E-GE3 by Vishay Intertechnology

Vishay Intertechnology's SUM70040E-GE3 is a N-channel power FET with 100V DS breakdown voltage and 0.004 ohm max on-resistance. Ideal for switching applications, it features 480A pulsed drain current, 266mJ avalanche energy rating, and built-in diode in a small outline package.

Median Price

$2.828

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 291 parts In-Stock

1+ parts

$1.180

100+ parts

$1.180

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$1.180

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291

$1.180

$1.180

$1.180

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Chip1Stop

Japan . 750 parts In-Stock

1+ parts

$2.070

100+ parts

$1.570

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-

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750

$2.070

$1.570

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Arrow

USA . 290 parts In-Stock

1+ parts

$2.448

100+ parts

$1.641

1k+ parts

$1.419

10k+ parts

-

290

$2.448

$1.641

$1.419

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Farnell

UK . 67 parts In-Stock

1+ parts

$2.870

100+ parts

$1.650

1k+ parts

$1.370

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-

67

$2.870

$1.650

$1.370

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Element14

Singapore . 67 parts In-Stock

1+ parts

$3.099

100+ parts

$2.110

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$1.572

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67

$3.099

$2.110

$1.572

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DigiKey

USA . 2,324 parts In-Stock

1+ parts

$4.330

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$2.000

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2,324

$4.330

$2.000

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Mouser Electronics

USA . 913 parts In-Stock

1+ parts

$4.330

100+ parts

$2.010

1k+ parts

$1.600

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913

$4.330

$2.010

$1.600

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Verical

USA . 771 parts In-Stock

1+ parts

-

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$2.828

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771

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$2.828

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RS (Exports)

UK . 375 parts In-Stock

1+ parts

-

100+ parts

$2.045

1k+ parts

$1.523

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375

-

$2.045

$1.523

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$1.937

100+ parts

-

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550

$1.937

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TME

Poland . 771 parts In-Stock

1+ parts

$4.090

100+ parts

$2.230

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771

$4.090

$2.230

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ACDS - Activité Composants Distribution Service

France . 15,200 parts In-Stock

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15,200

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Chip Stock

USA . 6,500 parts In-Stock

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6,500

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ComSIT Distribution GmbH

Germany . 800 parts In-Stock

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800

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Vyrian

USA . 794 parts In-Stock

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794

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,239 parts In-Stock

1+ parts

$0.410

100+ parts

-

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4,239

$0.410

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Semicontronic

India . 782 parts In-Stock

1+ parts

$1.510

100+ parts

$1.472

1k+ parts

$1.465

10k+ parts

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782

$1.510

$1.472

$1.465

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Ampacity Inc.

Singapore . 606 parts In-Stock

1+ parts

$1.510

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606

$1.510

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Corohmni

South Africa . 131 parts In-Stock

1+ parts

$1.703

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131

$1.703

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Argo Parts USA

USA . 2,419 parts In-Stock

1+ parts

$1.917

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2,419

$1.917

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Netroflash

USA . 100 parts In-Stock

1+ parts

$1.937

100+ parts

-

1k+ parts

$1.840

10k+ parts

$1.801

100

$1.937

-

$1.840

$1.801

Continental Prestige Electronics

USA . 568 parts In-Stock

1+ parts

$2.790

100+ parts

$1.550

1k+ parts

$1.490

10k+ parts

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568

$2.790

$1.550

$1.490

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Microchip USA

USA . 7,586 parts In-Stock

1+ parts

$12.462

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7,586

$12.462

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Perfect Parts

USA . 3,584 parts In-Stock

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3,584

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Futuretech Components

Singapore . 800 parts In-Stock

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800

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Overview

Unleash the power of innovation with the SUM70040E-GE3 by Vishay Intertechnology. As a leading manufacturer in the industry, Vishay Intertechnology delivers top-of-the-line Power Field Effect Transistors that are perfect for switching applications. With a high DS Breakdown Voltage of 100V and a maximum Drain Current of 120A, this N-CHANNEL transistor offers unparalleled performance and reliability. The built-in diode adds convenience, while the small outline package makes installation a breeze. Trust Vishay Intertechnology to provide cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection and insulation for the components inside, making this product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used in high power applications due to their lower on resistance and higher efficiency compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, making this FET suitable for applications where back EMF protection is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast turn-on and turn-off times, making it ideal for high-speed switching circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making this FET convenient for mass production.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle high voltages without breakdown, making it suitable for high voltage applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for compact and efficient PCB design, saving space and reducing overall system size.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and easy soldering, ensuring reliable connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally-off devices, offering better control and reliability in switching applications compared to depletion mode devices.

Maximum Pulsed Drain Current (IDM): 480 A

With a high pulsed drain current rating, this FET can handle short-term high current spikes without damage, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 266 mJ

The high avalanche energy rating indicates the FET's ability to handle high energy transients, making it rugged and reliable in harsh environments.

No. of Terminals: 2

Having only 2 terminals simplifies circuit design and makes this FET easy to integrate into existing systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high component density on the PCB, saving valuable board space and reducing overall system size.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers low gate leakage and high efficiency, making this FET suitable for power switching applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance, making this FET a dependable choice for various applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit over time.

Maximum Drain Current (ID): 120 A

With a high drain current rating, this FET can handle high continuous currents without overheating, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.004 ohm

The low on-resistance of the FET reduces power loss and heat dissipation, making it efficient for high power applications.

Terminal Position: SINGLE

Having a single terminal position simplifies PCB layout and assembly, making this FET easy to use in various circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a short reflow time, this FET is easy to solder and can withstand high temperatures during assembly, ensuring reliable performance.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures that the FET can withstand the heat of soldering process without damage, guaranteeing long-term reliability.

Technical Specifications

Power Field Effect Transistors (FET) SUM70040E-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

266 mJ

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

120 A

Maximum Drain-Source On Resistance:

.004 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

480 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM70040E-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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