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SUM70090E-GE3

Vishay Intertechnology

SUM70090E-GE3 by Vishay Intertechnology

Vishay Intertechnology's SUM70090E-GE3 is a N-channel FET with 100V DS breakdown voltage, 120A IDM, and 0.0089 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package with matte tin finish.

Median Price

$2.550

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,897 parts In-Stock

1+ parts

$2.550

100+ parts

$1.120

1k+ parts

$0.777

10k+ parts

-

1,897

$2.550

$1.120

$0.777

-

Newark

USA . 800 parts In-Stock

1+ parts

$3.060

100+ parts

$2.040

1k+ parts

$1.660

10k+ parts

$1.510

800

$3.060

$2.040

$1.660

$1.510

DigiKey

USA . 4,513 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.846

10k+ parts

$0.671

4,513

-

-

$0.846

$0.671

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.978

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.978

-

-

-

Chip Stock

USA . 5,190 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,190

-

-

-

-

Vyrian

USA . 3,578 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,578

-

-

-

-

ComSIT Distribution GmbH

Germany . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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800

-

-

-

-

ComSIT USA

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.959

100+ parts

-

1k+ parts

$0.921

10k+ parts

-

500

$0.959

-

$0.921

-

Ampacity Inc.

Singapore . 3,664 parts In-Stock

1+ parts

$1.360

100+ parts

-

1k+ parts

-

10k+ parts

-

3,664

$1.360

-

-

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Microchip USA

USA . 9,163 parts In-Stock

1+ parts

$6.402

100+ parts

-

1k+ parts

-

10k+ parts

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9,163

$6.402

-

-

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,000

-

-

-

-

iodParts Technologies Inc.

India . 800 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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800

-

-

-

-

Overview

Unleash the power of cutting-edge technology with Vishay Intertechnology's SUM70090E-GE3 Power Field Effect Transistor. Designed for high-performance switching applications, this N-CHANNEL transistor boasts a single configuration with a built-in diode for added convenience. With a maximum pulsed drain current of 120A and a minimum DS breakdown voltage of 100V, this transistor delivers superior reliability and efficiency. Experience seamless operation and optimized performance with Vishay Intertechnology's SUM70090E-GE3 - the ultimate choice for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good durability and thermal resistance, making this FET suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and higher efficiency compared to P-channel FETs, making them a popular choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode enhances protection against reverse current flow and inductive transients, improving the reliability of the FET in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low on-resistance, making it ideal for efficient power management.

Maximum Pulsed Drain Current (IDM): 120 A

High maximum pulsed drain current capability allows this FET to handle spikes in current without damage, ensuring robust performance in high-demand applications.

Maximum Drain Current (ID): 50 A

With a high maximum drain current rating, this FET can effectively handle continuous high-current loads, making it suitable for power applications requiring reliable performance.

Maximum Drain-Source On Resistance: 0.0089 ohm

Low on-resistance helps minimize power loss and improve efficiency in the FET's operation, making it an efficient choice for power switching applications.

Technical Specifications

Power Field Effect Transistors (FET) SUM70090E-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

80 mJ

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.0089 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

120 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM70090E-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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