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SUM70040M-GE3

Vishay Intertechnology

SUM70040M-GE3 by Vishay Intertechnology

Vishay Intertechnology's SUM70040M-GE3 is a N-channel FET with 100V DS breakdown voltage and 0.0038 ohm max RDS(on). Ideal for switching applications, it features 480A IDM, 266mJ EAS, and built-in diode. The small outline package with gull wing terminals suits surface mount designs.

Median Price

$2.450

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 390 parts In-Stock

1+ parts

$3.390

100+ parts

$1.869

1k+ parts

-

10k+ parts

-

390

$3.390

$1.869

-

-

Mouser Electronics

USA . 2,784 parts In-Stock

1+ parts

$3.520

100+ parts

$1.870

1k+ parts

$1.470

10k+ parts

$1.370

2,784

$3.520

$1.870

$1.470

$1.370

Future Electronics

Canada . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.510

10k+ parts

$1.480

800

-

-

$1.510

$1.480

Farnell

UK . 742 parts In-Stock

1+ parts

-

100+ parts

$1.480

1k+ parts

$1.120

10k+ parts

-

742

-

$1.480

$1.120

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 14,066 parts In-Stock

1+ parts

$3.520

100+ parts

-

1k+ parts

-

10k+ parts

-

14,066

$3.520

-

-

-

NAC Semi

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.020

10k+ parts

-

800

-

-

$2.020

-

IBS Electronics

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.963

10k+ parts

$1.924

800

-

-

$1.963

$1.924

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 7,841 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,841

-

-

-

-

Authorized Procurement Solutions

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,600

-

-

-

-

Overview

Vishay Intertechnology's SUM70040M-GE3 is a top-of-the-line Power Field Effect Transistor that guarantees exceptional quality and performance. Ideal for switching applications, this N-CHANNEL FET offers a maximum pulsed drain current of 480 A and a minimum DS breakdown voltage of 100 V. With its built-in diode and small outline package style, this transistor ensures efficiency and reliability in various electronic systems. Trust Vishay Intertechnology to deliver cutting-edge technology that exceeds expectations and provides unmatched value to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a good balance of durability and cost-effectiveness for the product.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used in power electronics applications due to their higher mobility and conductivity.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, making the product more versatile and efficient.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, such as in power supplies or motor control.

Surface Mount: YES

Easier and more cost-effective to integrate into modern PCB designs.

Minimum DS Breakdown Voltage: 100 V

Suitable for high-power applications where voltage spikes may occur.

Package Shape: RECTANGULAR

Space-efficient design for compact electronics systems.

Terminal Form: GULL WING

Allows for easy soldering onto the PCB for a reliable connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs require a gate voltage to turn on, providing better control over the switching operation.

Maximum Pulsed Drain Current (IDM): 480 A

Capable of handling high current pulses, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 266 mJ

Can withstand energy spikes and surges, ensuring long-term reliability.

No. of Terminals: 6

Provides all the necessary connections for the FET to operate effectively.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption for energy-efficient operation.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and performance.

Maximum Drain Current (ID): 120 A

Sufficient current rating for handling high-power loads.

Maximum Drain-Source On Resistance: 0.0038 ohm

Low on-resistance results in minimal power loss and heat generation.

Terminal Position: SINGLE

Simplified wiring and connections for ease of installation.

Technical Specifications

Power Field Effect Transistors (FET) SUM70040M-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

266 mJ

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

120 A

Maximum Drain-Source On Resistance:

.0038 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

480 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM70040M-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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