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SM6T6V8CAHM3_A/I

Vishay Intertechnology

SM6T6V8CAHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T6V8CAHM3_A/I is a single avalanche diode with 600W power dissipation, 6.8V breakdown voltage, and bidirectional polarity. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.

Median Price

$0.100

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 500 parts In-Stock

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Vyrian

USA . 8,697 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ampacity Inc.

Singapore . 29 parts In-Stock

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$0.085

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,661 parts In-Stock

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Corohmni

South Africa . 16 parts In-Stock

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Semicontronic

India . 291 parts In-Stock

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$0.185

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$0.180

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$0.179

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AZTECH Wire

Italy . 220 parts In-Stock

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$10.761

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Continental Prestige Electronics

USA . 4,130 parts In-Stock

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Argo Parts USA

USA . 903 parts In-Stock

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Modulus Dynamics

Lithuania . 200 parts In-Stock

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Robosynatics

Brazil . 150 parts In-Stock

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Lucentia Tech

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Bastille Electronics

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Overview

Discover the ultimate protection for your electronic devices with the Vishay Intertechnology SM6T6V8CAHM3_A/I Transient Suppression Device. Crafted with precision and expertise, this product offers unparalleled quality and reliability. Ideal for a wide range of applications, this single-configured device provides maximum power dissipation of 600W and a nominal breakdown voltage of 6.8V, ensuring optimal performance in any situation. Trust Vishay Intertechnology to deliver exceptional value and peace of mind with their cutting-edge technology. Elevate your electronics with the best in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the device, making it suitable for various applications in different environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High peak power dissipation capability allows the device to handle transient spikes and surges effectively, protecting the circuitry from damage.

Nominal Breakdown Voltage: 6.8 V

The breakdown voltage specification ensures that the device activates and starts clamping when the voltage exceeds this threshold, providing overvoltage protection.

Maximum Clamping Voltage: 13.4 V

The clamping voltage indicates the maximum voltage that the device will limit the transient voltage to, reducing the stress on the connected components and preventing damage.

Technology: AVALANCHE

Avalanche technology allows the device to handle high energy surges efficiently by rapidly transitioning to a low impedance state, ensuring effective transient suppression.

Technical Specifications

Transient Suppression Devices SM6T6V8CAHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.45 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

13.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

5.8 V

Maximum Reverse Current:

2000 uA

Reverse Test Voltage:

5.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T6V8CAHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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