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SM6T68AHM3_A/I

Vishay Intertechnology

SM6T68AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T68AHM3_A/I is a 68 V TRANS VOLTAGE SUPPRESSOR DIODE with 600 W power dissipation. It operates b/w -65 to 150 °C and has a max clamping voltage of 121 V. Ideal for transient suppression in automotive electronics due to AEC-Q101 standard compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,670 parts In-Stock

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6,670

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Nova Conductors

Japan . 71 parts In-Stock

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71

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 829 parts In-Stock

1+ parts

$0.073

100+ parts

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829

$0.073

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Corohmni

South Africa . 1 parts In-Stock

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$0.091

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1

$0.091

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AZTECH Wire

Italy . 694 parts In-Stock

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$15.087

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694

$15.087

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Continental Prestige Electronics

USA . 3,800 parts In-Stock

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3,800

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Argo Parts USA

USA . 3,659 parts In-Stock

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3,659

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Bastille Electronics

Australia . 55 parts In-Stock

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Overview

Experience unparalleled protection with the SM6T68AHM3_A/I Transient Suppression Device by Vishay Intertechnology. Designed with cutting-edge technology and superior craftsmanship, this device offers reliable defense against voltage spikes, ensuring your electronics stay safe and secure. Perfect for a wide range of applications, this device provides peace of mind knowing your equipment is safeguarded. Trust in Vishay Intertechnology's expertise and invest in the best with the SM6T68AHM3_A/I.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the device lightweight and durable, making it easy to handle and install.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high maximum power dissipation capability, this device can effectively handle transient surges and spikes, providing reliable protection for sensitive electronics.

Nominal Breakdown Voltage: 68 V

The nominal breakdown voltage of 68 V ensures that the device activates at the specified voltage to suppress transient events and protect connected equipment from damage.

Maximum Reverse Current: 1 uA

The low maximum reverse current ensures minimal leakage, enhancing the efficiency and effectiveness of the transient suppression device.

Maximum Operating Temperature: 150 °C

The wide operating temperature range allows the device to function reliably in various environmental conditions, making it suitable for a range of applications.

Technical Specifications

Transient Suppression Devices SM6T68AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.4 V

Minimum Breakdown Voltage:

64.6 V

Nominal Breakdown Voltage:

68 V

Maximum Clamping Voltage:

121 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

58.1 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58.1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T68AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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