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SM6T68AHM3_A/H

Vishay Intertechnology

SM6T68AHM3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T68AHM3_A/H is a single avalanche diode with 600W power dissipation, 68V breakdown voltage, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to its AEC-Q101 compliance and unidirectional polarity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,100 parts In-Stock

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5,100

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,219 parts In-Stock

1+ parts

$0.056

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$0.056

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Corohmni

South Africa . 575 parts In-Stock

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$0.136

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575

$0.136

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Ampacity Inc.

Singapore . 1,117 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 882 parts In-Stock

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$9.535

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882

$9.535

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Continental Prestige Electronics

USA . 5,428 parts In-Stock

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Argo Parts USA

USA . 4,919 parts In-Stock

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4,919

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Discover the Vishay Intertechnology SM6T68AHM3_A/H, a high-quality transient suppression device designed for superior protection against voltage spikes. With Vishay's reputation for excellence in manufacturing, this product offers reliable performance and durability. Ideal for a wide range of applications, this diode provides peace of mind by safeguarding your electronics from harmful surges. Say goodbye to worries about power fluctuations and ensure the longevity of your valuable equipment with the Vishay SM6T68AHM3_A/H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good mechanical strength and durability, making the device reliable for long-term use.

Nominal Breakdown Voltage: 68 V

The nominal breakdown voltage of 68 V ensures effective protection against voltage spikes and surges in the electrical circuit.

Maximum Power Dissipation: 5 W

With a high maximum power dissipation of 5 W, the device can handle high transient power levels without getting damaged.

Peak Reflow Temperature °C: 260

The device can withstand peak reflow temperatures up to 260°C, making it suitable for reflow soldering processes.

Reverse Test Voltage: 58.1 V

The reverse test voltage of 58.1 V ensures effective reverse voltage protection, safeguarding the circuit components from damage.

Technical Specifications

Transient Suppression Devices SM6T68AHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.4 V

Minimum Breakdown Voltage:

64.6 V

Nominal Breakdown Voltage:

68 V

Maximum Clamping Voltage:

121 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

58.1 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58.1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T68AHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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