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SM6T68AHE3_A/I

Vishay Intertechnology

SM6T68AHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T68AHE3_A/I is a unidirectional avalanche diode with 68V breakdown voltage, 600W peak power dissipation, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and high clamping voltage of 121V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,322 parts In-Stock

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6,322

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 305 parts In-Stock

1+ parts

$0.082

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305

$0.082

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Aztec Data Supply Inc.

USA . 30,999 parts In-Stock

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$0.121

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30,999

$0.121

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Component Stockers USA

USA . 60,712 parts In-Stock

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$1.660

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$1.660

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AZTECH Wire

Italy . 535 parts In-Stock

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$19.589

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535

$19.589

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Argo Parts USA

USA . 3,615 parts In-Stock

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3,615

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Continental Prestige Electronics

USA . 3,383 parts In-Stock

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3,383

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Bastille Electronics

Australia . 66 parts In-Stock

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Overview

Experience unparalleled protection against transient voltage spikes with the SM6T68AHE3_A/I by Vishay Intertechnology. As a leader in the industry, Vishay Intertechnology's Transient Suppression Devices are renowned for their reliability and quality. Whether you need to safeguard sensitive electronic equipment or ensure the longevity of your circuits, the SM6T68AHE3_A/I provides peace of mind with its high-performance capabilities. Trust Vishay Intertechnology to deliver cutting-edge solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it suitable for various applications.

Config: SINGLE

Having a single configuration simplifies the installation process and reduces the chances of errors during setup.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB integration, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high peak power dissipation capacity, this device can effectively handle transient surges and protect sensitive components.

Nominal Breakdown Voltage: 68 V

The nominal breakdown voltage of 68V ensures reliable protection against overvoltage events, safeguarding connected equipment.

Maximum Reverse Current: 1 uA

The low reverse current rating minimizes power loss in the circuit, enhancing overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and mounting within a circuit, optimizing space utilization.

Reverse Test Voltage: 58.1 V

The reverse test voltage specification ensures the device can effectively handle reverse polarity situations without damage.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and ensures proper alignment during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is ideal for applications with limited area availability.

Technical Specifications

Transient Suppression Devices SM6T68AHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.4 V

Minimum Breakdown Voltage:

64.6 V

Nominal Breakdown Voltage:

68 V

Maximum Clamping Voltage:

121 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

58.1 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58.1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T68AHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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