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SM6T68AHE3_A/H

Vishay Intertechnology

SM6T68AHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T68AHE3_A/H is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 68V breakdown voltage. Ideal for transient suppression in automotive applications due to AEC-Q101 reference standard compliance and unidirectional polarity. Operates b/w -65°C to 150°C, offering reliable protection against surges with a max clamping voltage of 121V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,815 parts In-Stock

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3,815

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Nova Conductors

Japan . 63 parts In-Stock

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63

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 199 parts In-Stock

1+ parts

$0.169

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199

$0.169

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Aztec Data Supply Inc.

USA . 2,445 parts In-Stock

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$0.174

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$0.174

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Ampacity Inc.

Singapore . 734 parts In-Stock

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$2.010

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734

$2.010

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AZTECH Wire

Italy . 285 parts In-Stock

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$9.071

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285

$9.071

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Argo Parts USA

USA . 2,328 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 945 parts In-Stock

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Overview

Experience the innovative technology of Vishay Intertechnology with the SM6T68AHE3_A/H Transient Suppression Device. This high-quality product offers reliable protection against voltage transients, ensuring the safety and longevity of your electronic devices. Ideal for a wide range of applications, from automotive to industrial, this device guarantees peace of mind with its superior performance and durability. Upgrade your system today with Vishay Intertechnology's trusted solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring it can withstand various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability allows the device to handle surges and protect sensitive electronics effectively.

Nominal Breakdown Voltage: 68 V

Suitable voltage rating for transient suppression, ensuring overvoltage protection for connected systems.

Reverse Test Voltage: 58.1 V

Specific reverse test voltage ensures reliable performance in reverse bias conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to function in various temperature environments.

Reference Standard: AEC-Q101

Compliance with automotive grade standards ensures high reliability and quality for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient suppression applications, providing effective protection against voltage spikes.

Technology: AVALANCHE

Avalanche technology ensures rapid response to transient events, safeguarding connected systems from damage.

Technical Specifications

Transient Suppression Devices SM6T68AHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.4 V

Minimum Breakdown Voltage:

64.6 V

Nominal Breakdown Voltage:

68 V

Maximum Clamping Voltage:

121 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

58.1 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58.1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T68AHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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