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SM6T39A-M3/5B

Vishay Intertechnology

SM6T39A-M3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T39A-M3/5B is a 600W Trans Voltage Suppressor Diode with 39.05V Breakdown Voltage, ideal for transient suppression applications. It features a unidirectional polarity, 1uA max reverse current, and 69.7V clamping voltage. Suitable for surface mount designs in electronics to protect against voltage spikes.

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 18,292 parts In-Stock

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Nova Conductors

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98

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Ampacity Inc.

Singapore . 308 parts In-Stock

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$0.010

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308

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Aztec Data Supply Inc.

USA . 326 parts In-Stock

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$0.051

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326

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Corohmni

South Africa . 468 parts In-Stock

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468

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AZTECH Wire

Italy . 695 parts In-Stock

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695

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SM6T39A-M3/5B. With a maximum power dissipation of 600W and a nominal breakdown voltage of 39.05V, this diode offers unmatched protection in a compact small outline package. Perfect for applications requiring robust voltage clamping, this diode is a must-have for ensuring the longevity and reliability of your electronic devices. Trust Vishay Intertechnology for quality products that deliver exceptional performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection against external elements, ensuring long-lasting performance.

Config: SINGLE

Simplifies installation and reduces complexity in circuit design.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high surge currents and protect sensitive electronics from transient voltage spikes.

Nominal Breakdown Voltage: 39.05 V

Offers precise voltage protection, ensuring that the circuit operates within safe limits.

Maximum Reverse Current: 1 uA

Ensures minimal leakage current, enhancing the efficiency of the transient suppression device.

Surface Mount: YES

Facilitates easy installation on PCBs, saving space and improving the overall aesthetics of the design.

Maximum Clamping Voltage: 69.7 V

Limits the voltage across the circuit during transient events, preventing damage to sensitive components.

Technical Specifications

Transient Suppression Devices SM6T39A-M3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

41 V

Minimum Breakdown Voltage:

37.1 V

Nominal Breakdown Voltage:

39.05 V

Maximum Clamping Voltage:

69.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

33.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

33.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T39A-M3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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