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SM6T36AHE3_A/H

Vishay Intertechnology

SM6T36AHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T36AHE3_A/H is a unidirectional Trans Voltage Suppressor Diode with 600W peak power dissipation, 36V breakdown voltage, and 1uA max reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 standard compliance.

Median Price

$0.173

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.173

100+ parts

$0.164

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$0.164

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350

$0.173

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$0.164

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Distributors (In-Stock)

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Vyrian

USA . 6,696 parts In-Stock

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6,696

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Nova Conductors

Japan . 35 parts In-Stock

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35

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Distributors (Availability)

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Corohmni

South Africa . 298 parts In-Stock

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$0.062

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298

$0.062

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Aztec Data Supply Inc.

USA . 141 parts In-Stock

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$0.113

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141

$0.113

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Semicontronic

India . 144 parts In-Stock

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$0.147

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$0.143

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$0.143

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144

$0.147

$0.143

$0.143

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AZTECH Wire

Italy . 673 parts In-Stock

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$17.877

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673

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Continental Prestige Electronics

USA . 6,953 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 1,500 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SM6T36AHE3_A/H. With a maximum power dissipation of 600W and a nominal breakdown voltage of 36V, this diode offers superior protection against voltage transients. Whether you're in the automotive industry or telecommunications sector, this product is designed to keep your electronics safe and running smoothly. Trust Vishay Intertechnology for quality components that deliver value and peace of mind. Upgrade your protection with the SM6T36AHE3_A/H today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this device lightweight and durable, ideal for applications where weight and space are limited.

Config: SINGLE

With a single configuration, this device is easy to install and simplifies the design process.

Surface Mount: YES

This surface mount device allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability of this device ensures reliable protection against transient voltage spikes.

Nominal Breakdown Voltage: 36 V

The nominal breakdown voltage of 36V provides effective protection for sensitive electronics against voltage surges.

Maximum Reverse Current: 1 uA

The low reverse current of 1uA ensures minimal power loss and optimal performance of the device.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into existing circuit designs.

Reverse Test Voltage: 30.8 V

The reverse test voltage of 30.8V ensures the device can handle reverse voltage without failure.

No. of Terminals: 2

With 2 terminals, the device can be easily connected in a circuit for effective transient suppression.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact designs.

Maximum Operating Temperature: 150 °C

The high operating temperature range of up to 150°C ensures reliable performance in a variety of environmental conditions.

Technical Specifications

Transient Suppression Devices SM6T36AHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

37.8 V

Minimum Breakdown Voltage:

34.2 V

Nominal Breakdown Voltage:

36 V

Maximum Clamping Voltage:

64.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30.8 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

30.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T36AHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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