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SM6T33CAHE3/5B

Vishay Intertechnology

SM6T33CAHE3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T33CAHE3/5B is a single avalanche diode with 33V breakdown voltage, 600W peak power dissipation, and bidirectional polarity. Ideal for transient suppression in applications requiring protection against voltage spikes up to 59V. Package style: small outline, surface mountable, operating temperature range: -65°C to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,749 parts In-Stock

1+ parts

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8,749

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,557 parts In-Stock

1+ parts

$1.010

100+ parts

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1,557

$1.010

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AZTECH Wire

Italy . 510 parts In-Stock

1+ parts

$18.726

100+ parts

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510

$18.726

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Continental Prestige Electronics

USA . 2,031 parts In-Stock

1+ parts

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2,031

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Argo Parts USA

USA . 1,847 parts In-Stock

1+ parts

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1,847

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Looking for reliable transient suppression devices for your electronic devices? Look no further than the SM6T33CAHE3/5B by Vishay Intertechnology. With a maximum non-repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 33V, this product ensures top-notch quality and performance. Whether you're in the automotive, industrial, or consumer electronics industry, this product offers unmatched protection against voltage spikes and surges. Trust Vishay Intertechnology to deliver the best in transient suppression devices, providing peace of mind for your valuable equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components, making it a reliable choice for transient suppression devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high power dissipation rating of 600 W, this transient suppression device is capable of handling large transient spikes without damage, ensuring the protection of sensitive electronics.

Nominal Breakdown Voltage: 33 V

The nominal breakdown voltage of 33 V ensures that the device activates at the specified voltage level to suppress transient surges effectively, safeguarding connected equipment.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this device to function reliably in a wide range of environments, making it suitable for various applications.

Technology: AVALANCHE

The avalanche technology used in this transient suppression device enables rapid response to transient voltage spikes, providing effective protection for sensitive components.

Technical Specifications

Transient Suppression Devices SM6T33CAHE3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

59 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

28.2 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T33CAHE3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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