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SM6T33AHE3_A/H

Vishay Intertechnology

SM6T33AHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T33AHE3_A/H is a single avalanche diode with 600W power dissipation, 33.05V breakdown voltage, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to its AEC-Q101 standard compliance and unidirectional polarity.

Median Price

$0.055

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

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$0.055

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$0.052

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$0.055

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Vyrian

USA . 4,925 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Semicontronic

India . 462 parts In-Stock

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$0.047

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$0.046

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462

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Ampacity Inc.

Singapore . 94 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.055

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Corohmni

South Africa . 91 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,960 parts In-Stock

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$0.117

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Component Stockers USA

USA . 29,333 parts In-Stock

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$1.650

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AZTECH Wire

Italy . 636 parts In-Stock

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$7.081

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Continental Prestige Electronics

USA . 3,502 parts In-Stock

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Argo Parts USA

USA . 1,742 parts In-Stock

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Bastille Electronics

Australia . 71 parts In-Stock

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Overview

Looking for reliable transient suppression devices to protect your electronic circuits? Look no further than the Vishay Intertechnology SM6T33AHE3_A/H! With a high-quality plastic/epoxy package body and advanced avalanche technology, this single-configured diode offers superior protection with a nominal breakdown voltage of 33.05 V. Whether you need to safeguard your sensitive components from voltage spikes in automotive, industrial, or consumer electronics applications, this Vishay product delivers maximum power dissipation of 600 W and low reverse current. Trust Vishay Intertechnology for top-notch quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the device, making it durable and reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation rating allows the device to handle sudden spikes in voltage without getting damaged, ensuring robust transient suppression capability.

Nominal Breakdown Voltage: 33.05 V

The precise breakdown voltage ensures effective transient suppression by activating at the specified voltage threshold, protecting downstream components.

Maximum Operating Temperature: 150 °C

The wide operating temperature range allows the device to function effectively in harsh environmental conditions, enhancing its versatility and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures efficient suppression of transient voltage spikes, safeguarding connected equipment from damage.

Technical Specifications

Transient Suppression Devices SM6T33AHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33.05 V

Maximum Clamping Voltage:

59 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

28.2 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

28.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T33AHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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