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SM6T30AHM3_A/H

Vishay Intertechnology

SM6T30AHM3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T30AHM3_A/H is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 30V breakdown voltage. Ideal for transient suppression applications, it operates b/w -65 to 150 °C and has a max clamping voltage of 53.5V. AEC-Q101 compliant, it features avalanche technology and matte tin terminal finish.

Median Price

$0.157

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$0.157

100+ parts

$0.149

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$0.149

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500

$0.157

$0.149

$0.149

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Distributors (In-Stock)

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Vyrian

USA . 5,715 parts In-Stock

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5,715

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Nova Conductors

Japan . 45 parts In-Stock

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45

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 77 parts In-Stock

1+ parts

$0.055

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77

$0.055

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Semicontronic

India . 188 parts In-Stock

1+ parts

$0.133

100+ parts

$0.130

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$0.129

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188

$0.133

$0.130

$0.129

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Ampacity Inc.

Singapore . 187 parts In-Stock

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$0.133

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187

$0.133

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Aztec Data Supply Inc.

USA . 789 parts In-Stock

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$0.144

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789

$0.144

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.157

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$0.149

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$0.149

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500

$0.157

$0.149

$0.149

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AZTECH Wire

Italy . 381 parts In-Stock

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$7.508

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381

$7.508

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Argo Parts USA

USA . 3,624 parts In-Stock

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Continental Prestige Electronics

USA . 1,987 parts In-Stock

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Bastille Electronics

Australia . 91 parts In-Stock

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Overview

Experience top-notch quality and reliability with the Vishay Intertechnology SM6T30AHM3_A/H Transient Suppression Device. This product, part of the innovative Transient Suppression Devices category, offers unparalleled protection against voltage spikes. With Vishay Intertechnology's reputation for excellence in manufacturing, you can trust that this device will safeguard your electronics effectively. From automotive to industrial applications, this product provides peace of mind knowing your equipment is shielded from harmful surges. Invest in the Vishay Intertechnology SM6T30AHM3_A/H today and ensure optimal performance and longevity for your valuable electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection against external elements, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability allows the device to handle sudden surges or spikes in power without getting damaged, providing reliable protection for connected equipment.

Nominal Breakdown Voltage: 30 V

The nominal breakdown voltage ensures that the device activates only when the voltage exceeds a safe threshold, offering effective transient suppression.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this device can function effectively in various environmental conditions, making it versatile for different applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard indicates that this product is suitable for automotive applications, meeting quality and reliability requirements in challenging environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient suppression of voltage transients, safeguarding sensitive electronic components in the circuit.

Technical Specifications

Transient Suppression Devices SM6T30AHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

31.5 V

Minimum Breakdown Voltage:

28.5 V

Nominal Breakdown Voltage:

30 V

Maximum Clamping Voltage:

53.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

25.6 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

25.6 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T30AHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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