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SM6T200AHE3_A/I

Vishay Intertechnology

SM6T200AHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T200AHE3_A/I is a unidirectional Trans Voltage Suppressor Diode with 200V breakdown voltage, 600W peak reverse power dissipation, and 1uA max reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and avalanche technology.

Median Price

$0.147

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.147

100+ parts

$0.140

1k+ parts

$0.140

10k+ parts

-

350

$0.147

$0.140

$0.140

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,040 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,040

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 350 parts In-Stock

1+ parts

$0.125

100+ parts

-

1k+ parts

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10k+ parts

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350

$0.125

-

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Semicontronic

India . 45 parts In-Stock

1+ parts

$0.125

100+ parts

$0.122

1k+ parts

$0.121

10k+ parts

-

45

$0.125

$0.122

$0.121

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Aztec Data Supply Inc.

USA . 1,160 parts In-Stock

1+ parts

$0.134

100+ parts

-

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1,160

$0.134

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Corohmni

South Africa . 188 parts In-Stock

1+ parts

$0.142

100+ parts

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188

$0.142

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.147

100+ parts

$0.140

1k+ parts

$0.140

10k+ parts

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350

$0.147

$0.140

$0.140

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AZTECH Wire

Italy . 469 parts In-Stock

1+ parts

$9.295

100+ parts

-

1k+ parts

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469

$9.295

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Continental Prestige Electronics

USA . 6,160 parts In-Stock

1+ parts

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6,160

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Argo Parts USA

USA . 1,694 parts In-Stock

1+ parts

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1,694

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Bastille Electronics

Australia . 24 parts In-Stock

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24

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Overview

Looking for reliable transient suppression devices? Look no further than the SM6T200AHE3_A/I by Vishay Intertechnology. With a reputation for top-notch quality and innovation, Vishay Intertechnology delivers superior products that meet the highest industry standards. These devices are perfect for protecting sensitive electronic equipment from voltage spikes, ensuring optimal performance and longevity. Trust Vishay Intertechnology to provide you with the best solutions for your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides excellent durability and protection for the transient suppression device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high maximum peak power dissipation ensures that the device can handle surges or spikes effectively, protecting connected components.

Nominal Breakdown Voltage: 200 V

The nominal breakdown voltage of 200 V ensures reliable protection against overvoltage conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transient suppression device can withstand elevated temperatures without compromising performance.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this transient suppression device meets stringent automotive industry requirements for quality and reliability.

Technical Specifications

Transient Suppression Devices SM6T200AHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

210 V

Minimum Breakdown Voltage:

190 V

Nominal Breakdown Voltage:

200 V

Maximum Clamping Voltage:

353 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

171 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

171 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T200AHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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