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SM6T18AHM3_A/I

Vishay Intertechnology

SM6T18AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T18AHM3_A/I is a single avalanche diode with 18V breakdown voltage, 600W peak power dissipation, and 1uA reverse current. Ideal for transient suppression in automotive applications due to AEC-Q101 compliance and unidirectional polarity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,621 parts In-Stock

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8,621

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Nova Conductors

Japan . 92 parts In-Stock

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92

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 687 parts In-Stock

1+ parts

$0.010

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687

$0.010

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Corohmni

South Africa . 193 parts In-Stock

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$0.128

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193

$0.128

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.139

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$0.132

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$0.132

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100

$0.139

$0.132

$0.132

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Aztec Data Supply Inc.

USA . 632 parts In-Stock

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$0.170

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632

$0.170

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Semicontronic

India . 878 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

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$1.950

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878

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 789 parts In-Stock

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$12.072

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789

$12.072

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Continental Prestige Electronics

USA . 6,524 parts In-Stock

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Argo Parts USA

USA . 2,475 parts In-Stock

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2,475

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Discover the Vishay Intertechnology SM6T18AHM3_A/I, a top-of-the-line Transient Suppression Device designed to provide unparalleled protection against voltage spikes. Manufactured with the highest quality materials and cutting-edge technology, this device boasts exceptional reliability and performance. Ideal for applications where safeguarding sensitive electronic components is crucial, this product offers peace of mind and security to customers looking to protect their investments. Upgrade to Vishay Intertechnology for superior protection and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the device.

Surface Mount: YES

Being surface mount compatible, the device can easily be integrated into various electronic applications for efficient transient voltage suppression.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high maximum power dissipation capability, this device can effectively handle transient overvoltage events without damage.

Nominal Breakdown Voltage: 18 V

The nominal breakdown voltage of 18 V provides reliable protection against overvoltage conditions within the specified range.

Maximum Reverse Current: 1 uA

The low maximum reverse current ensures minimal leakage and efficient transient suppression performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the device to function effectively in various environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures the device can still operate in extreme cold conditions without any issues.

Maximum Clamping Voltage: 32.5 V

The high maximum clamping voltage indicates the device's ability to limit the voltage across the protected circuit during transient events.

Technical Specifications

Transient Suppression Devices SM6T18AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

18.9 V

Minimum Breakdown Voltage:

17.1 V

Nominal Breakdown Voltage:

18 V

Maximum Clamping Voltage:

32.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

15.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

15.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T18AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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