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SM6T12AHM3_A/I

Vishay Intertechnology

SM6T12AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T12AHM3_A/I is a unidirectional avalanche diode with 600W peak power dissipation, ideal for transient suppression. With a breakdown voltage of 12V and max clamping voltage of 21.7V, it operates b/w -65°C to 150°C. This small outline package device is suitable for automotive applications meeting AEC-Q101 standards.

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Vyrian

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Nova Conductors

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50

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Aztec Data Supply Inc.

USA . 3,185 parts In-Stock

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Corohmni

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663

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Semicontronic

India . 1,627 parts In-Stock

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$3.010

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$2.935

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$2.920

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Ampacity Inc.

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300

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AZTECH Wire

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378

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Component Stockers USA

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$99.990

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Argo Parts USA

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SM6T12AHM3_A/I. With a maximum power dissipation of 600W and a nominal breakdown voltage of 12V, this diode offers top-notch quality and performance. Designed with a small outline package shape and dual terminals, it is perfect for a wide range of applications where protection against voltage spikes is crucial. Trust Vishay Intertechnology for high-quality components that deliver maximum protection and peace of mind. Upgrade to the SM6T12AHM3_A/I today and safeguard your electronic devices with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Config: SINGLE

Being a single configuration device simplifies installation and maintenance.

Surface Mount: YES

The surface mount design allows for easy and space-efficient mounting on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high peak power dissipation capability makes this device ideal for handling transient power surges.

Nominal Breakdown Voltage: 12 V

The nominal breakdown voltage of 12V offers protection for sensitive electronics against overvoltage events.

Maximum Reverse Current: 5 uA

The low reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into existing circuit layouts.

Reverse Test Voltage: 10.2 V

The reverse test voltage of 10.2V ensures reliable performance under varying voltage conditions.

No. of Terminals: 2

The two terminals provide secure connections for efficient power dissipation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables compact designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliability in harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for operation in a wide range of temperature settings.

Terminal Finish: Matte Tin (Sn)

The matte tin finish on the terminals provides excellent conductivity and solderability.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options in different applications.

Maximum Power Dissipation: 5 W

The high power dissipation capacity ensures efficient heat distribution for extended device lifespan.

Minimum Breakdown Voltage: 11.4 V

The minimum breakdown voltage offers robust protection against voltage spikes and surges.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper soldering without damaging the device.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering in various manufacturing processes.

Maximum Breakdown Voltage: 12.6 V

The maximum breakdown voltage provides an extra margin of safety for critical electronic components.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard for automotive-grade components, ensuring high quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor Diode ensures effective transient voltage suppression for sensitive electronics.

Technology: AVALANCHE

The avalanche technology offers fast response time and high energy dissipation capabilities for reliable protection.

Terminal Form: C BEND

The C bend terminal form provides secure and stable connections for reliable operation.

Maximum Repetitive Peak Reverse Voltage: 10.2 V

With a maximum repetitive peak reverse voltage of 10.2V, this device can handle repetitive voltage surges effectively.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only conducts in one direction for effective transient voltage suppression.

Maximum Clamping Voltage: 21.7 V

The maximum clamping voltage of 21.7V offers reliable protection against overvoltage events.

Diode Element Material: SILICON

The silicon diode element material provides high reliability and stability for long-term performance.

Technical Specifications

Transient Suppression Devices SM6T12AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

21.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

10.2 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

10.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T12AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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