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SM6T12A-M3/5B

Vishay Intertechnology

SM6T12A-M3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T12A-M3/5B is a single avalanche diode with 600W power dissipation, 12V breakdown voltage, and 5uA reverse current. Ideal for transient suppression in applications requiring unidirectional protection against voltage spikes. Package: PLASTIC/EPOXY, Surface Mount: YES, Temp Range: -65 to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,420 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 866 parts In-Stock

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$0.010

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866

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Aztec Data Supply Inc.

USA . 162 parts In-Stock

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$0.120

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Corohmni

South Africa . 398 parts In-Stock

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Component Stockers USA

USA . 25,276 parts In-Stock

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$1.810

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Semicontronic

India . 1,207 parts In-Stock

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$2.010

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$1.960

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$1.950

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AZTECH Wire

Italy . 533 parts In-Stock

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$8.092

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Continental Prestige Electronics

USA . 4,769 parts In-Stock

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Argo Parts USA

USA . 1,586 parts In-Stock

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Bastille Electronics

Australia . 34 parts In-Stock

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Overview

Looking for reliable transient suppression devices to protect your electronic circuits? Look no further than the Vishay Intertechnology SM6T12A-M3/5B. With its high-quality construction and superior performance, this product is a top choice for applications requiring efficient voltage clamping. Trust in Vishay Intertechnology's reputation for excellence in manufacturing and count on the SM6T12A-M3/5B to provide the value, benefits, and advantages you need to safeguard your equipment effectively. Upgrade your protection with this innovative solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

This high power dissipation capability allows the device to handle sudden spikes in voltage without getting damaged, making it reliable for transient suppression.

Nominal Breakdown Voltage: 12 V

The nominal breakdown voltage of 12 V indicates the level at which the device starts conducting and clamping voltage, ensuring protection against voltage surges.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand high levels of heat during operation without compromising its performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient transient suppression and protection against voltage spikes, making this device suitable for suppressing transients.

Technical Specifications

Transient Suppression Devices SM6T12A-M3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

21.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

10.2 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

10.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T12A-M3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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