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SM6T10CAHE3/5B

Vishay Intertechnology

SM6T10CAHE3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T10CAHE3/5B is a single bidirectional avalanche diode with 10 V breakdown voltage, ideal for transient suppression. With 600 W peak power dissipation and 18.6 V clamping voltage, it protects against voltage spikes in electronic circuits. Its small outline package and dual terminals make it suitable for surface mount applications in a wide temperature range from -65 to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,651 parts In-Stock

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2,651

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Semicontronic

India . 542 parts In-Stock

1+ parts

$0.010

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$0.010

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$0.010

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542

$0.010

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$0.010

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Aztec Data Supply Inc.

USA . 31,219 parts In-Stock

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$0.179

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$0.179

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Corohmni

South Africa . 60 parts In-Stock

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$0.183

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60

$0.183

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Ampacity Inc.

Singapore . 1,124 parts In-Stock

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$2.010

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1,124

$2.010

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AZTECH Wire

Italy . 473 parts In-Stock

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$17.696

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473

$17.696

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Argo Parts USA

USA . 3,024 parts In-Stock

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Continental Prestige Electronics

USA . 1,633 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Experience superior protection with the Vishay Intertechnology SM6T10CAHE3/5B transient suppression device. Designed for reliability and performance, this product offers customers peace of mind by safeguarding against voltage spikes and surges. Ideal for a range of applications in electronics and telecommunications, this single-config, bidirectional diode is a must-have for any circuit design. Trust Vishay Intertechnology to deliver quality solutions that prioritize your equipment's safety and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the device, making it a reliable choice for transient suppression.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability enables the device to effectively handle sudden voltage spikes or surges, offering efficient transient suppression.

Nominal Breakdown Voltage: 10 V

The precise breakdown voltage ensures that the device triggers at the intended voltage level, providing reliable transient suppression.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function effectively in various environmental conditions, ensuring consistent transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient suppression applications, offering superior performance and protection against voltage spikes.

Technical Specifications

Transient Suppression Devices SM6T10CAHE3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

10 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

18.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

8.55 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T10CAHE3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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