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SI7148DP-T1-GE3

Vishay Intertechnology

SI7148DP-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology SI7148DP-T1-GE3 is a N-channel FET with 75V DS breakdown voltage and 60A pulsed drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 96W.

Median Price

$2.952

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Arrow

USA . 1 parts In-Stock

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$0.590

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$0.590

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Chip1Stop

Japan . 2,663 parts In-Stock

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$1.790

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2,663

$1.790

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Newark

USA . 3,000 parts In-Stock

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$3.920

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$3.010

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$3.920

$3.010

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Mouser Electronics

USA . 3,960 parts In-Stock

1+ parts

$4.180

100+ parts

$1.930

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$1.610

10k+ parts

$1.530

3,960

$4.180

$1.930

$1.610

$1.530

DigiKey

USA . 3,079 parts In-Stock

1+ parts

$4.180

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$1.926

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$1.607

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3,079

$4.180

$1.926

$1.607

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Verical

USA . 2,663 parts In-Stock

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$1.984

1k+ parts

$1.655

10k+ parts

$1.563

2,663

-

$1.984

$1.655

$1.563

Distributors (In-Stock)

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Nova Conductors

Japan . 51 parts In-Stock

1+ parts

$1.630

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51

$1.630

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Chip Stock

USA . 22,000 parts In-Stock

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Rutronik

Germany . 15,000 parts In-Stock

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$1.110

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$1.110

ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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Vyrian

USA . 3,738 parts In-Stock

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Pegasus Components GmbH

Germany . 3,000 parts In-Stock

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Bristol Electronics

USA . 550 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,330 parts In-Stock

1+ parts

$0.400

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3,330

$0.400

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Ampacity Inc.

Singapore . 4,170 parts In-Stock

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$1.200

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4,170

$1.200

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Semicontronic

India . 3,804 parts In-Stock

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$1.200

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$1.170

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$1.164

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3,804

$1.200

$1.170

$1.164

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.299

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$1.234

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$1.234

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450

$1.299

$1.234

$1.234

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Argo Parts USA

USA . 1,882 parts In-Stock

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$1.630

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1,882

$1.630

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Continental Prestige Electronics

USA . 1,341 parts In-Stock

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$1.630

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$1.597

1,341

$1.630

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$1.597

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.630

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$1.548

10k+ parts

$1.516

1,000

$1.630

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$1.548

$1.516

Corohmni

South Africa . 70 parts In-Stock

1+ parts

$1.797

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70

$1.797

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Microchip USA

USA . 2,677 parts In-Stock

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$9.531

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$9.531

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RC Electronics

USA . 47,018 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,292 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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Metaverse IC Inc.

Canada . 3,800 parts In-Stock

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Kepictronics

USA . 2,562 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

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500

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Overview

Enhance your power switching applications with the high-quality SI7148DP-T1-GE3 Power FET by Vishay Intertechnology. This N-channel transistor offers a single configuration with a built-in diode, providing superior performance and reliability. With a maximum drain current of 28A and a low on-resistance of 0.011 ohm, this transistor ensures efficient operation even in demanding conditions. Whether you're looking to optimize power management in automotive, industrial, or consumer electronics, this enhancement mode FET delivers exceptional value and performance for your projects. Trust Vishay Intertechnology for industry-leading components that drive innovation and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of power flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the design of circuits by incorporating a diode, making it easier to integrate into systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in control circuits.

Surface Mount: YES

Enables easy and convenient mounting onto circuit boards, saving space and simplifying assembly processes.

Maximum Drain-Source On Resistance: 0.011 ohm

Low on-resistance ensures minimal power loss and efficient operation in high current applications.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for industrial and automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) SI7148DP-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

75 V

Maximum Drain Current (Abs) (ID):

28 A

Maximum Drain Current (ID):

28 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

60 A

Surface Mount:

YES

Terminal Finish:

PURE MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

90 ns

Maximum Turn On Time (ton):

96 ns

Trade Compliance

SI7148DP-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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