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SI7139DP-T1-GE3

Vishay Intertechnology

SI7139DP-T1-GE3 by Vishay Intertechnology

SI7139DP-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 70A IDM, and 0.0055 ohm RDS(on). With a max power dissipation of 48W and operating temperature of 150°C, it is ideal for high-power switching circuits.

Median Price

$1.230

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 28,990 parts In-Stock

1+ parts

$1.230

100+ parts

$0.681

1k+ parts

$0.578

10k+ parts

-

28,990

$1.230

$0.681

$0.578

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Newark

USA . 3,000 parts In-Stock

1+ parts

$2.070

100+ parts

$1.120

1k+ parts

$1.030

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-

3,000

$2.070

$1.120

$1.030

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DigiKey

USA . 8,445 parts In-Stock

1+ parts

$2.240

100+ parts

$0.967

1k+ parts

$0.706

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8,445

$2.240

$0.967

$0.706

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Mouser Electronics

USA . 5,561 parts In-Stock

1+ parts

$2.240

100+ parts

$0.968

1k+ parts

$0.707

10k+ parts

$0.647

5,561

$2.240

$0.968

$0.707

$0.647

Element14

Singapore . 25,128 parts In-Stock

1+ parts

$3.030

100+ parts

$1.320

1k+ parts

$1.010

10k+ parts

$0.972

25,128

$3.030

$1.320

$1.010

$0.972

Future Electronics

Canada . 15,000 parts In-Stock

1+ parts

-

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$1.180

15,000

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$1.180

Arrow

USA . 3,000 parts In-Stock

1+ parts

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$0.567

3,000

-

-

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$0.567

TTI Europe

Germany . 3,000 parts In-Stock

1+ parts

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$0.637

3,000

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$0.637

RS (Exports)

UK . 3,000 parts In-Stock

1+ parts

-

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$1.310

1k+ parts

$0.975

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3,000

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$1.310

$0.975

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Verical

USA . 3,000 parts In-Stock

1+ parts

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$0.567

3,000

-

-

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$0.567

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

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$0.724

3,000

-

-

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$0.724

Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.922

100+ parts

-

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150

$0.922

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Chip Stock

USA . 43,511 parts In-Stock

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43,511

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NAC Semi

USA . 12,000 parts In-Stock

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$1.620

12,000

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$1.620

Vyrian

USA . 10,906 parts In-Stock

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10,906

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Cyclops Electronics Ltd

UK . 9,000 parts In-Stock

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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IBS Electronics

USA . 6,000 parts In-Stock

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$2.258

6,000

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$2.258

Sensible Micro Corp

USA . 4,039 parts In-Stock

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4,039

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Schukat

Germany . 3,000 parts In-Stock

1+ parts

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$1.024

1k+ parts

$0.877

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3,000

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$1.024

$0.877

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Florida Circuit

USA . 528 parts In-Stock

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528

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ComSIT Distribution GmbH

Germany . 88 parts In-Stock

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Micros

Poland . 50 parts In-Stock

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$7.760

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50

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$7.760

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Partservice

France . 50 parts In-Stock

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$14.130

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$14.130

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$14.130

50

-

$14.130

$14.130

$14.130

Contempo Components LLC

USA . 4 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,751 parts In-Stock

1+ parts

$0.463

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10,751

$0.463

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Semicontronic

India . 10,531 parts In-Stock

1+ parts

$0.463

100+ parts

$0.451

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$0.449

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10,531

$0.463

$0.451

$0.449

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Corohmni

South Africa . 121 parts In-Stock

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$0.835

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121

$0.835

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Continental Prestige Electronics

USA . 534 parts In-Stock

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$0.922

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$0.903

534

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$0.903

Argo Parts USA

USA . 407 parts In-Stock

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$0.922

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407

$0.922

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Aztec Data Supply Inc.

USA . 862 parts In-Stock

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$1.450

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862

$1.450

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Microchip USA

USA . 3,050 parts In-Stock

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$4.262

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$4.262

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Futuretech Components

Singapore . 6,000 parts In-Stock

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6,000

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Netroflash

USA . 1,000 parts In-Stock

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$0.903

1k+ parts

$0.875

10k+ parts

$0.857

1,000

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$0.903

$0.875

$0.857

Robosynatics

Brazil . 950 parts In-Stock

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950

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Lucentia Tech

USA . 950 parts In-Stock

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$1.505

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$1.505

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$1.505

950

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$1.505

$1.505

$1.505

Kepictronics

USA . 155 parts In-Stock

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155

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Overview

Experience the superior performance and reliability of the SI7139DP-T1-GE3 Power FET by Vishay Intertechnology. With its cutting-edge technology and high-quality construction, this P-CHANNEL transistor is ideal for switching applications. Boasting a maximum pulsed drain current of 70 A and an avalanche energy rating of 45 mJ, this transistor offers unmatched power and efficiency. Whether you're in need of a robust solution for your automotive, industrial, or consumer electronics project, the SI7139DP-T1-GE3 delivers outstanding results every time. Trust Vishay Intertechnology to provide you with the exceptional value and benefits you deserve.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL FETs are suitable for applications where a negative voltage is required, making this product versatile for a variety of circuit designs.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this FET can handle higher voltages, ensuring reliable performance in demanding circuit environments.

Maximum Pulsed Drain Current (IDM): 70 A

The high pulsed drain current rating allows this FET to handle sudden surges in current, making it suitable for applications where high power spikes may occur.

Avalanche Energy Rating (EAS): 45 mJ

The high avalanche energy rating indicates the FET's ability to withstand energy pulses, making it robust and reliable in tough operating conditions.

Maximum Power Dissipation (Abs): 48 W

With a high power dissipation rating, this FET can handle significant power loads without overheating, ensuring long-term durability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this FET to operate efficiently in elevated temperature environments, increasing its versatility in various applications.

Technical Specifications

Power Field Effect Transistors (FET) SI7139DP-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

45 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

22.4 A

Maximum Drain-Source On Resistance:

.0055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C5

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

70 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

PURE MATTE TIN

Terminal Form:

C BEND

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI7139DP-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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