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SI2318DS-T1-GE3

Vishay Intertechnology

SI2318DS-T1-GE3 by Vishay Intertechnology

SI2318DS-T1-GE3 by Vishay Intertechnology is a N-channel power FET with a min DS breakdown voltage of 40V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max operating temperature of 150°C.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 15,672 parts In-Stock

1+ parts

$0.576

100+ parts

$0.369

1k+ parts

$0.289

10k+ parts

-

15,672

$0.576

$0.369

$0.289

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Mouser Electronics

USA . 60,465 parts In-Stock

1+ parts

$0.700

100+ parts

$0.305

1k+ parts

$0.217

10k+ parts

$0.170

60,465

$0.700

$0.305

$0.217

$0.170

Element14

Singapore . 15,672 parts In-Stock

1+ parts

-

100+ parts

$0.320

1k+ parts

$0.172

10k+ parts

$0.160

15,672

-

$0.320

$0.172

$0.160

TTI

USA . 6,000 parts In-Stock

1+ parts

-

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-

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$0.148

6,000

-

-

-

$0.148

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

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$0.164

3,000

-

-

-

$0.164

Chip1Stop

Japan . 492 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.176

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-

492

-

$0.251

$0.176

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Verical

USA . 162 parts In-Stock

1+ parts

-

100+ parts

$0.326

1k+ parts

$0.242

10k+ parts

-

162

-

$0.326

$0.242

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 20 parts In-Stock

1+ parts

$0.279

100+ parts

-

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-

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20

$0.279

-

-

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Maritex

Poland . 13,000 parts In-Stock

1+ parts

$0.336

100+ parts

$0.250

1k+ parts

$0.226

10k+ parts

$0.210

13,000

$0.336

$0.250

$0.226

$0.210

Vyrian

USA . 17,849 parts In-Stock

1+ parts

-

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17,849

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Component Sense

UK . 13,589 parts In-Stock

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13,589

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-

-

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Rutronik

Germany . 12,000 parts In-Stock

1+ parts

-

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$0.207

12,000

-

-

-

$0.207

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.223

6,000

-

-

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$0.223

Chip Stock

USA . 4,848 parts In-Stock

1+ parts

-

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4,848

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LIBRA Elektronik GmbH

Germany . 2,845 parts In-Stock

1+ parts

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2,845

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-

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TME

Poland . 2,124 parts In-Stock

1+ parts

-

100+ parts

$0.286

1k+ parts

$0.258

10k+ parts

$0.241

2,124

-

$0.286

$0.258

$0.241

Electronics Depot

USA . 860 parts In-Stock

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860

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Bristol Electronics

USA . 237 parts In-Stock

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237

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Atlantic Semiconductor

USA . 199 parts In-Stock

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199

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Inventory MP

USA . 38 parts In-Stock

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38

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 19,263 parts In-Stock

1+ parts

$0.126

100+ parts

-

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19,263

$0.126

-

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Semicontronic

India . 13,761 parts In-Stock

1+ parts

$0.126

100+ parts

$0.123

1k+ parts

$0.122

10k+ parts

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13,761

$0.126

$0.123

$0.122

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Argo Parts USA

USA . 4,791 parts In-Stock

1+ parts

$0.279

100+ parts

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10k+ parts

$0.271

4,791

$0.279

-

-

$0.271

Continental Prestige Electronics

USA . 18,117 parts In-Stock

1+ parts

$0.502

100+ parts

$0.285

1k+ parts

$0.173

10k+ parts

-

18,117

$0.502

$0.285

$0.173

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.086

100+ parts

$1.031

1k+ parts

$1.031

10k+ parts

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350

$1.086

$1.031

$1.031

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Aztec Data Supply Inc.

USA . 4,863 parts In-Stock

1+ parts

$1.580

100+ parts

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4,863

$1.580

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Corohmni

South Africa . 288 parts In-Stock

1+ parts

$1.934

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288

$1.934

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Perfect Parts

USA . 15,130 parts In-Stock

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15,130

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Akira Global LLC

USA . 15 parts In-Stock

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15

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Overview

Discover the power and reliability of the SI2318DS-T1-GE3 by Vishay Intertechnology. As a leader in the industry, Vishay brings you high-quality Power FETs that are perfect for a variety of applications. With its N-CHANNEL polarity and built-in diode, this transistor is ideal for switching tasks. Its small outline package and surface mount design make it easy to install and integrate into any project. Offering a maximum drain current of 3A and a minimum DS breakdown voltage of 40V, this transistor delivers exceptional performance. Trust Vishay Intertechnology for all your power transistor needs and experience the value, benefits, and advantages our products bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, making it suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs have lower ON resistance and higher efficiency compared to P-CHANNEL, making this FET a good choice for power switching applications.

Minimum DS Breakdown Voltage: 40 V

The high breakdown voltage allows for reliable operation in high voltage applications, ensuring safety and longevity of the FET.

Maximum Drain Current (ID): 3 A

With a high drain current rating, this FET can handle higher power loads without overheating or malfunctioning, making it suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.045 ohm

The low ON resistance results in minimal power loss and heat generation during operation, leading to higher efficiency and performance of the FET.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can withstand elevated temperatures without performance degradation, making it suitable for industrial and automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) SI2318DS-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

45 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI2318DS-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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