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SI2318DS-T1-BE3

Vishay Intertechnology

SI2318DS-T1-BE3 by Vishay Intertechnology

Vishay Intertechnology's SI2318DS-T1-BE3 is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 3A and 0.045 ohm On Resistance, operating in ENHANCEMENT MODE. With a peak reflow temperature of 260°C, this transistor is suitable for surface mount configurations in various electronic devices.

Median Price

$0.149

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 73,455 parts In-Stock

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$0.149

73,455

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$0.149

TTI

USA . 21,000 parts In-Stock

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$0.209

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$0.209

Future Electronics

Canada . 3,000 parts In-Stock

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$0.143

3,000

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$0.143

Avnet

USA . 3,000 parts In-Stock

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3,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 54 parts In-Stock

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$0.225

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54

$0.225

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Vyrian

USA . 29,412 parts In-Stock

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29,412

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NAC Semi

USA . 6,000 parts In-Stock

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$0.225

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$0.225

IBS Electronics

USA . 3,000 parts In-Stock

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$0.186

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$0.186

Bristol Electronics

USA . 3,000 parts In-Stock

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$0.439

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$0.189

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$0.175

3,000

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$0.439

$0.189

$0.175

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 29,474 parts In-Stock

1+ parts

$0.125

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29,474

$0.125

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Semicontronic

India . 29,398 parts In-Stock

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$0.125

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$0.122

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$0.121

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29,398

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$0.121

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Continental Prestige Electronics

USA . 4,312 parts In-Stock

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$0.225

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$0.221

4,312

$0.225

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Netroflash

USA . 2,000 parts In-Stock

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$0.225

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$0.214

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$0.210

2,000

$0.225

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$0.210

Argo Parts USA

USA . 1,564 parts In-Stock

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$0.225

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$0.219

1,564

$0.225

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$0.219

Modulus Dynamics

Lithuania . 21,750 parts In-Stock

1+ parts

$0.572

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$0.572

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$0.572

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21,750

$0.572

$0.572

$0.572

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Corohmni

South Africa . 793 parts In-Stock

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$0.625

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793

$0.625

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Aztec Data Supply Inc.

USA . 3,249 parts In-Stock

1+ parts

$1.640

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3,249

$1.640

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Overview

Discover the power of the SI2318DS-T1-BE3 by Vishay Intertechnology, a top-quality N-CHANNEL Power FET. With a built-in diode for enhanced performance, this transistor is perfect for switching applications. Its small outline package and high temperature tolerance make it ideal for a variety of electronic projects. Trust in Vishay's reputation for excellence and innovation, and experience the value and reliability that this product brings to your designs. Upgrade your power management solutions with the SI2318DS-T1-BE3 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable plastic/epoxy material ensures a longer product lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics and lower resistance compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Surface mount design saves space and allows for easy integration onto PCBs.

Minimum DS Breakdown Voltage: 40 V

High breakdown voltage ensures reliable performance in high voltage applications.

Terminal Form: GULL WING

Gull wing terminal form allows for easy soldering and secure connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control and efficiency in switching applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package design saves space and allows for high-density mounting.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in harsh environments.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor elements.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in a wide range of environments.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance.

Maximum Drain Current (ID): 3 A

High maximum drain current capability allows for handling of higher current levels.

Maximum Drain-Source On Resistance: 0.045 ohm

Low on-resistance ensures minimal power loss and high efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

30-second maximum time at peak reflow temperature ensures proper soldering without damaging the component.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering and component assembly.

Maximum Feedback Capacitance (Crss): 45 pF

Low feedback capacitance reduces the risk of signal distortion and improves overall performance.

Technical Specifications

Power Field Effect Transistors (FET) SI2318DS-T1-BE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

45 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI2318DS-T1-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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