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SI2304DDS-T1-BE3

Vishay Intertechnology

SI2304DDS-T1-BE3 by Vishay Intertechnology

Vishay Intertechnology's SI2304DDS-T1-BE3 is a N-CHANNEL FET with 30V DS Breakdown Voltage and 15A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.06 ohm RDS(on) and 17pF Crss. Suitable for surface mount, it has GULL WING terminals and can withstand temperatures from -55 to 150°C.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 30,000 parts In-Stock

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-

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$0.087

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$0.087

Verical

USA . 30,000 parts In-Stock

1+ parts

-

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$0.087

30,000

-

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$0.087

Chip1Stop

Japan . 15,000 parts In-Stock

1+ parts

-

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$0.085

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$0.085

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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$0.091

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$0.091

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Nova Conductors

Japan . 31 parts In-Stock

1+ parts

$0.140

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31

$0.140

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Bristol Electronics

USA . 3,196 parts In-Stock

1+ parts

$0.525

100+ parts

$0.263

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$0.105

10k+ parts

$0.079

3,196

$0.525

$0.263

$0.105

$0.079

Vyrian

USA . 30,648 parts In-Stock

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30,648

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NAC Semi

USA . 6,000 parts In-Stock

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$0.170

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$0.170

Dan-Mar Components

USA . 5,909 parts In-Stock

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5,909

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.295

3,000

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$0.295

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 30,893 parts In-Stock

1+ parts

$0.057

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30,893

$0.057

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Semicontronic

India . 30,643 parts In-Stock

1+ parts

$0.057

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$0.056

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$0.055

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30,643

$0.057

$0.056

$0.055

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Argo Parts USA

USA . 1,658 parts In-Stock

1+ parts

$0.140

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$0.136

1,658

$0.140

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$0.136

Continental Prestige Electronics

USA . 379 parts In-Stock

1+ parts

$0.140

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$0.137

379

$0.140

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$0.137

Netroflash

USA . 100 parts In-Stock

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$0.140

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100

$0.140

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Aztec Data Supply Inc.

USA . 834 parts In-Stock

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$1.050

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834

$1.050

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Corohmni

South Africa . 233 parts In-Stock

1+ parts

$1.107

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233

$1.107

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iodParts Technologies Inc.

India . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Unlock the power of efficient switching with the SI2304DDS-T1-BE3 by Vishay Intertechnology. Crafted with precision and expertise, this N-channel Power FET offers unparalleled performance and reliability in a compact package. Ideal for a variety of applications, this transistor is designed to enhance your systems while maximizing power efficiency. Experience seamless operation and optimized functionality with the SI2304DDS-T1-BE3, setting new standards in power transistor technology. Elevate your projects with Vishay Intertechnology's superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the transistor, enhancing its reliability and lifespan.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protects the circuit from reverse current flow, making it suitable for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors typically have better performance characteristics compared to depletion mode transistors, providing improved overall functionality.

Surface Mount: YES

The surface mount option allows for easy installation onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Power Dissipation (Abs): 1.7 W

With a high power dissipation capability, this transistor can handle large loads without overheating, ensuring stable and reliable operation.

Maximum Turn On Time (ton): 30 ns

The fast turn on time of 30 ns allows for quick response in switching applications, reducing delays and improving overall efficiency.

Maximum Operating Temperature: 150 °C

The high operating temperature range of up to 150°C enables this transistor to be used in a wide range of environments and applications.

Maximum Drain-Source On Resistance: 0.06 ohm

The low drain-source on resistance of 0.06 ohm minimizes power loss and improves efficiency during operation.

Technical Specifications

Power Field Effect Transistors (FET) SI2304DDS-T1-BE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

3.3 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

17 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

15 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

25 ns

Maximum Turn On Time (ton):

30 ns

Trade Compliance

SI2304DDS-T1-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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