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IRFL110

Vishay Intertechnology

IRFL110 by Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Drain Current (ID): 1.5 A; Minimum DS Breakdown Voltage: 100 V;

Median Price

$0.420

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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DF Sales Co.

USA . 29 parts In-Stock

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DF Sales Co.

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Component Electronics Inc.

Canada . 89 parts In-Stock

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Vyrian

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Bristol Electronics

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Pride Electronics

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Prism Electronics

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Mil-Aero Solutions, Inc.

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ComSIT Distribution GmbH

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Quantum Digital Technology

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Q Components

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Atlantic Semiconductor

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Electronics Depot

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PC Components Company LLC

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Electronic Expediters

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LWI Electronics Inc

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Semi Source

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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M&R Communications

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Beltway Electronics Company

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Component Stockers USA

USA . 423 parts In-Stock

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Montclair Electronics, Inc.

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Technical Specifications

Power Field Effect Transistors (FET) IRFL110 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

150 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

1.5 A

Maximum Drain-Source On Resistance:

.54 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PSSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

12 A

Qualification:

Not Qualified

Reference Standard:

IEC-61249-2-21

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFL110 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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