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2N4119A

Vishay Intertechnology

2N4119A by Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Qualification: Not Qualified;

Median Price

$24.140

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 72 parts In-Stock

1+ parts

$24.140

100+ parts

$16.700

1k+ parts

$15.820

10k+ parts

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72

$24.140

$16.700

$15.820

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Distributors (In-Stock)

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Freelance Electronics

USA . 21 parts In-Stock

1+ parts

$3.417

100+ parts

$4.101

1k+ parts

$3.383

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21

$3.417

$4.101

$3.383

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Digiode

USA . 319 parts In-Stock

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$13.870

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319

$13.870

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Vyrian

USA . 3,267 parts In-Stock

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Bristol Electronics

USA . 2,500 parts In-Stock

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Anansix

USA . 2,346 parts In-Stock

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Kruse Electronics AG

Switzerland . 500 parts In-Stock

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500

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Kruse

Germany . 500 parts In-Stock

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500

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Electronic Expediters

USA . 352 parts In-Stock

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352

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ABC Electronics Ltd.

UK . 340 parts In-Stock

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340

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Cyclops Electronics Ltd

UK . 233 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 205 parts In-Stock

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ECAB

Sweden . 177 parts In-Stock

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Prism Electronics

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A2Z Electronics, Inc.

USA . 19 parts In-Stock

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R&J Components

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M&R Communications

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Mentor Electronics Marketing, LLC

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Electronics Depot

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MISTER SPROCKETS

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Distributors (Availability)

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Corphita

USA . 377 parts In-Stock

1+ parts

$13.140

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377

$13.140

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QUARKTWIN TECHNOLOGY LTD

USA . 6,380 parts In-Stock

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6,380

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Supply Digital

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452

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Assy Fe

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Kepictronics

USA . 233 parts In-Stock

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Perfect Parts

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RTC Component Inc.

USA . 17 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) 2N4119A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.5 pF

JEDEC-95 Code:

TO-206AF

JESD-30 Code:

O-MBCY-W4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N4119A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-041-4597, 5961010414597

NIIN

010414597

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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