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2N4117A

Vishay Intertechnology

2N4117A by Vishay Intertechnology

The Vishay Intertechnology 2N4117A is a N-CHANNEL FET with a min DS Breakdown Voltage of 40V, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a Max Power Dissipation of 0.3W and Max Operating Temperature of 175°C. The transistor features a ROUND package shape with WIRE terminals and JUNCTION technology.

Median Price

$37.460

Lifecycle Status

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31

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1k+

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Mouser Electronics

USA . 142 parts In-Stock

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$37.460

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$27.000

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TEDSS.com

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American Microsemiconductor Inc.

USA . 1,688 parts In-Stock

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Nova Conductors

Japan . 66 parts In-Stock

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Digiode

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VNN

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Cyclops Electronics Ltd

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Vyrian

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Halfin

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Kruse Electronics AG

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Kruse

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Chip Stock

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Component Sense

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4 Star Electronics, Inc.

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Fibra_Brandt Electronic GMBH

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ComSIT Distribution GmbH

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ComSIT USA

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Manoshevitz Elec. Sales

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DF Sales Co.

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LittleDiode

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ACDS - Activité Composants Distribution Service

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Prism Electronics

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LWI Electronics Inc

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Mil-Aero Solutions, Inc.

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First Choice Components Inc.

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Classic Components Corporation

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Mentor Electronics Marketing, LLC

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Electronic Expediters

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Advanced Electronics

New Zealand . 317 parts In-Stock

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$0.564

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$0.513

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$0.462

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Aztec Data Supply Inc.

USA . 188 parts In-Stock

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$0.800

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AZTECH Wire

Italy . 889 parts In-Stock

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$7.539

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Corohmni

South Africa . 589 parts In-Stock

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Continental Prestige Electronics

USA . 1,589 parts In-Stock

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$9.869

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Netroflash

USA . 1,000 parts In-Stock

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Ampacity Inc.

Singapore . 635 parts In-Stock

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Semicontronic

India . 501 parts In-Stock

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Component Stockers USA

USA . 28 parts In-Stock

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$12.980

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Corphita

USA . 305 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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CPlus Electronics

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Kepictronics

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Argo Parts USA

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Glotronic Ltd.

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Supply Digital

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Singapore . 586 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of innovation with the Vishay Intertechnology 2N4117A Small Signal Field Effect Transistor. Manufactured to the highest quality standards, this N-CHANNEL transistor is designed for applications such as amplifiers, offering superior performance and reliability. With a minimum breakdown voltage of 40V and maximum power dissipation of 0.3W, the 2N4117A provides exceptional value and efficiency. Trust Vishay Intertechnology for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent thermal conductivity, allowing for efficient heat dissipation and ensuring durability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and lower resistance compared to P-channel FETs, making them suitable for high-speed switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET delivers stable and high-quality signal amplification for various audio and signal processing applications.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40 V, this FET can handle higher voltages, offering protection against voltage spikes and ensuring reliable performance.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into electronic circuits, providing versatility in design and space-saving benefits.

Terminal Form: WIRE

Wire terminals offer secure connections and easy soldering, enhancing the reliability and durability of the transistor in various applications.

Operating Mode: DEPLETION MODE

Depletion mode operation simplifies circuit design and offers finer control over the transistor's conductivity, making it suitable for precision applications.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this FET can handle moderate power levels, ensuring reliable performance under normal operating conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides mechanical robustness and easy handling, making it suitable for various industrial and commercial applications.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high performance and low noise characteristics, making this FET ideal for sensitive amplification and precision signal processing applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this FET can withstand elevated temperatures without compromising performance, making it suitable for high-temperature applications.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent electrical properties and reliability, ensuring consistent performance and long-term stability in electronic circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides corrosion resistance and solderability, ensuring reliable connections and long-term performance in various environmental conditions.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and assembly, enhancing the ease of integration and reducing the overall footprint of the electronic system.

Maximum Feedback Capacitance (Crss): 1.5 pF

With a maximum feedback capacitance of 1.5 pF, this FET offers low input capacitance and minimal signal distortion, making it ideal for high-frequency applications requiring precise signal amplification.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N4117A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.5 pF

JEDEC-95 Code:

TO-206AF

JESD-30 Code:

O-MBCY-W4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N4117A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-017-6023, 5961010176023

NIIN

010176023

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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