Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Toshiba's TPC8125,LQ(S is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. Features include 10A max drain current, 0.017 ohm max on resistance, and GULL WING terminals in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, it offers peak reflow at 260°C for 30s.
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Provides durability and protection for the transistor, making it suitable for a variety of applications.
Allows for efficient switching operations and versatile use in different circuit designs.
Simplifies circuit design by including a diode within the transistor package, saving space and improving overall efficiency.
Designed specifically for switching applications, ensuring reliable performance in high-speed switching circuits.
Facilitates easy installation on PCBs, saving time and effort during the assembly process.
Provides a high breakdown voltage, offering protection against voltage spikes and ensuring the transistor's longevity.
A common and convenient shape for placement on PCBs, allowing for easy integration into various electronic devices.
Enables secure soldering onto PCBs, ensuring a reliable electrical connection.
Enhancement mode transistors offer improved performance and efficiency in switching applications.
Provides multiple connection points for versatile circuit configurations and functionality.
Compact size allows for space-saving on PCBs, ideal for applications where board real estate is limited.
Metal-oxide semiconductor technology offers high performance and reliability in various operating conditions.
Silicon transistors are widely used due to their high efficiency and reliability in electronic circuits.
Capable of handling high current loads, making it suitable for power applications.
Low on-resistance minimizes power loss and heat dissipation, improving overall efficiency.
Dual terminals provide flexibility in circuit design and enable more complex connections.
Ensures reliable soldering during assembly process, maintaining the integrity of connections.
Withstands high reflow temperatures during soldering process, ensuring the transistor's durability.
Small Signal Field Effect Transistors (FET) TPC8125,LQ(S attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
TPC8125,LQ(S Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - PCN_Packing-Specification_BW 06/Aug/2015
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
SS14
Jinan Jingheng Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
BAV99
ROHM
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Daco Semiconductor
1N4148WS
Multicomp Pro
SZNUP2105LT1G
Onsemi
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LL4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
General Diode
Frontier Electronics
M24308/2-1F
Souriau-sunbank Connection Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;
Diodes Incorporated
EU2B-YS3303C
Idec
ROTARY SWITCH;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
2N7002
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
FDC658P
FDC658P by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in enhancement mode. With a max drain current of 4A and a max power dissipation of 1.6W, it offers reliable performance in various electronic circuits.
LND150K1-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .013 A; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI4435DDY-T1-GE3
Vishay Intertechnology
SI4435DDY-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V breakdown voltage and 11.4A drain current. Ideal for switching applications, it features a built-in diode, 0.024 ohm on-resistance, and operates in enhancement mode at up to 150°C.
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
SI4459ADY-T1-GE3
SI4459ADY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 29A Drain Current, and 0.005 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals.
2N7002DW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .115 A;
BS170P
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Elements: 1; No. of Terminals: 3;
IRF9310TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8;
2N7002ET1G
2N7002ET1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with 2.5 ohm RDS(on) and can handle up to 0.3W power dissipation.
BSS123-7-F
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
BS250P
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): IN-LINE;
ZXMN6A07FTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Finish: Matte Tin (Sn); JESD-30 Code: R-PDSO-G3;
FDS4935BZ
Fairchild Semiconductor
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
BC548B
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
BSS84AKW,115
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 50 V; Reference Standard: AEC-Q101; IEC-60134; Maximum Operating Temperature: 150 Cel;
FDC5612
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
IRF6216TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 200 mJ; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 150 V;
2N7002K
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .3 A; Maximum Feedback Capacitance (Crss): 5 pF; Terminal Form: GULL WING;
SI2301CDS-T1-E3
Vishay Intertechnology's SI2301CDS-T1-E3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3.1A Drain Current, 0.112 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high performance in compact spaces.
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TPC8129,LQ(S
Toshiba
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 30 V;
TPC8053-H(TE12L,Q)
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Position: DUAL; Maximum Operating Temperature: 150 Cel;
TPC8107
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain Current (Abs) (ID): 13 A; Terminal Position: DUAL;
TPC8028
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
TPC8125
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .017 ohm;
TPC8024-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Finish: TIN LEAD; Maximum Drain Current (ID): 13 A;
TPC8015-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
TPC8026
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum DS Breakdown Voltage: 30 V; Transistor Element Material: SILICON;
TPC8027
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .0055 ohm;
TPC8010-H(TE12L,Q)
Small Signal Field-Effect Transistors;
TPC8013-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain Current (Abs) (ID): 15 A; Maximum Operating Temperature: 150 Cel;
TPC8017-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
TPC8022-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; JESD-609 Code: e0; Terminal Position: DUAL;
TPC8014(TE12L,Q)
TPC8025
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;
TPC8012-H(TE12L,Q)
TPC8018-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G8;
TPC8013-H(TE12L,Q)
TPC8020-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain-Source On Resistance: .013 ohm; Transistor Application: SWITCHING;
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