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TK65S04N1L,LXHQ

Toshiba

TK65S04N1L,LXHQ by Toshiba

Toshiba's TK65S04N1L,LXHQ is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Featuring 130A IDM and 0.0078 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 175°C. With a compact GULL WING package style, this FET is AEC-Q101 compliant for automotive use.

Median Price

$1.770

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,310 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.546

10k+ parts

$0.508

11,310

$1.770

$0.755

$0.546

$0.508

DigiKey

USA . 4,359 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.545

10k+ parts

$0.444

4,359

$1.770

$0.755

$0.545

$0.444

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 8,879 parts In-Stock

1+ parts

$3.392

100+ parts

-

1k+ parts

-

10k+ parts

-

8,879

$3.392

-

-

-

Overview

Discover the ultimate power and efficiency with the Toshiba TK65S04N1L,LXHQ Power Field Effect Transistor. Crafted by the renowned manufacturer Toshiba, this N-CHANNEL transistor brings unparalleled performance in switching applications. With a maximum drain current of 65 A and a low on-resistance of 0.0078 ohm, this transistor offers reliability and precision like no other. Whether you're designing industrial equipment or automotive systems, this single configuration with a built-in diode will elevate your projects to new heights. Experience the quality and innovation that only Toshiba can deliver with the TK65S04N1L,LXHQ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

Offers enhanced performance and efficiency for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a built-in diode, reducing the need for additional components.

Transistor Application: SWITCHING

Optimized for efficient switching operations, making it ideal for power management applications.

Surface Mount: YES

Enables easy and secure mounting onto circuit boards, saving space and simplifying assembly.

Maximum Pulsed Drain Current (IDM): 130 A

Capable of handling high currents, suitable for demanding applications that require power handling capacity.

Maximum Power Dissipation (Abs): 107 W

Can dissipate relatively high amounts of power, ensuring stable operation under varying load conditions.

Maximum Operating Temperature: 175 °C

Can operate effectively in high temperature environments, improving reliability in harsh conditions.

Technical Specifications

Power Field Effect Transistors (FET) TK65S04N1L,LXHQ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Toshiba

Specs

Avalanche Energy Rating (EAS):

104 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

65 A

Maximum Drain-Source On Resistance:

.0078 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

130 pF

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

130 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TK65S04N1L,LXHQ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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