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TK290P65Y,RQ

Toshiba

TK290P65Y,RQ by Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; No. of Terminals: 2; Maximum Drain-Source On Resistance: .29 ohm;

Median Price

$1.890

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,805 parts In-Stock

1+ parts

$1.870

100+ parts

$1.070

1k+ parts

$0.982

10k+ parts

$0.981

3,805

$1.870

$1.070

$0.982

$0.981

DigiKey

USA . 3,876 parts In-Stock

1+ parts

$1.910

100+ parts

$1.201

1k+ parts

-

10k+ parts

$0.981

3,876

$1.910

$1.201

-

$0.981

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.110

100+ parts

$1.010

1k+ parts

$0.910

10k+ parts

-

600

$1.110

$1.010

$0.910

-

Component Stockers USA

USA . 5,263 parts In-Stock

1+ parts

$1.830

100+ parts

$1.210

1k+ parts

$0.870

10k+ parts

-

5,263

$1.830

$1.210

$0.870

-

Microchip USA

USA . 6,927 parts In-Stock

1+ parts

$5.814

100+ parts

-

1k+ parts

-

10k+ parts

-

6,927

$5.814

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,500

-

-

-

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Perfect Parts

USA . 101 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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101

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iodParts Technologies Inc.

India . 90 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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90

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Technical Specifications

Power Field Effect Transistors (FET) TK290P65Y,RQ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Toshiba

Specs

Avalanche Energy Rating (EAS):

106 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

11.5 A

Maximum Drain-Source On Resistance:

.29 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.5 pF

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

46 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TK290P65Y,RQ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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