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RN1302,LF(T

Toshiba

RN1302,LF(T by Toshiba

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 40,884 parts In-Stock

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$0.136

100+ parts

$0.044

1k+ parts

$0.026

10k+ parts

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40,884

$0.136

$0.044

$0.026

-

Chip1Stop

Japan . 2,090 parts In-Stock

1+ parts

-

100+ parts

$0.031

1k+ parts

$0.031

10k+ parts

$0.030

2,090

-

$0.031

$0.031

$0.030

Verical

USA . 1,660 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.033

10k+ parts

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1,660

-

-

$0.033

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Distributors (Availability)

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Continental Prestige Electronics

USA . 10,640 parts In-Stock

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100+ parts

$0.042

1k+ parts

$0.029

10k+ parts

$0.018

10,640

-

$0.042

$0.029

$0.018

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

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-

-

-

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1302,LF(T attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

RN1302,LF(T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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