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RN1301(TE85L,F)

Toshiba

RN1301(TE85L,F) by Toshiba

Toshiba's RN1301(TE85L,F) is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and transition frequency of 200MHz. This surface-mount device comes in a small outline package with gull wing terminals.

Median Price

$0.116

Lifecycle Status

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1k+

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Verical

USA . 15,000 parts In-Stock

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$0.095

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$0.087

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$0.095

$0.087

Chip1Stop

Japan . 7,800 parts In-Stock

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$0.137

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$0.115

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$0.115

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ACDS - Activité Composants Distribution Service

France . 11,500 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$0.054

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Ampacity Inc.

Singapore . 9,588 parts In-Stock

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$0.067

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Assy Fe

Spain . 5,710 parts In-Stock

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Continental Prestige Electronics

USA . 4,499 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Enhance your electronic projects with the RN1301(TE85L,F) by Toshiba, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Toshiba, known for their reliable and durable components, this PNP transistor is perfect for switching applications. With a built-in resistor and high-performance silicon material, this transistor offers exceptional value and versatility. Whether you're a hobbyist or a professional, the RN1301(TE85L,F) provides the power and efficiency you need to bring your projects to life. Step up your game with Toshiba's innovative technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for current control in circuits and enables the transistor to be used in switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by having the resistor integrated, reducing external components needed.

Transistor Application: SWITCHING

Designed for fast switching operations, making it suitable for various electronic devices.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards for space-saving and automated assembly.

Terminal Form: GULL WING

Facilitates a reliable and secure connection on the PCB, ensuring stable performance.

Maximum Power Dissipation (Abs): 0.1 W

Can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 30

Provides consistent amplification of current signals for predictable and stable circuit performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications, offering flexibility in circuit design.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current loads, making it suitable for various electronic switching applications.

Nominal Transition Frequency (fT): 200 MHz

Allows for high-speed operation, making the transistor ideal for fast switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1301(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

BUILT IN BAIS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

RN1301(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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