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RN1306(TE85L,F)

Toshiba

RN1306(TE85L,F) by Toshiba

Toshiba's RN1306(TE85L,F) is a NPN BJT transistor with max. power dissipation of 0.1W, min. DC current gain of 80, and max. collector current of 0.1A. Ideal for small signal applications in surface mount configurations due to its silicon element material and compact size.

Median Price

$0.122

Lifecycle Status

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1k+

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Verical

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Ampacity Inc.

Singapore . 7,116 parts In-Stock

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GreenTree Electronics

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Continental Prestige Electronics

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Overview

Discover the unmatched quality and reliability of Toshiba's RN1306(TE85L,F) Small Signal Bipolar Junction Transistor. Ideal for a wide range of applications, this NPN transistor offers impressive performance with a minimum DC current gain of 80 and maximum collector current of 0.1 A. With surface mount capabilities and a maximum power dissipation of 0.1 W, this transistor is perfect for your next project. Trust in Toshiba's reputation for excellence and unlock the value and benefits this product brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product a versatile choice for various electronic applications.

Surface Mount: YES

Surface mount capability allows for easier integration into circuit boards, saving space and facilitating automated manufacturing processes.

Maximum Power Dissipation (Abs): 0.1 W

With a maximum power dissipation of 0.1 W, this transistor can handle moderate power levels, suitable for many low-power applications.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain of 80 indicates strong signal amplification capability, ensuring reliable performance in amplification circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and temperature stability compared to other materials, making this product a reliable choice for electronic designs.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, suitable for low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1306(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

80

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1306(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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