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2SC1815-Y(F)

Toshiba

2SC1815-Y(F) by Toshiba

2SC1815-Y(F) by Toshiba is a NPN bipolar junction transistor with a min DC current gain of 120 and max collector-emitter voltage of 50V. It is commonly used as an amplifier in electronic circuits, featuring a max power dissipation of 0.4W and operating temperature up to 125°C. With a nominal transition frequency of 80MHz, it comes in a cylindrical package with three terminals for through-hole mounting.

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Overview

Enhance your electronic projects with the 2SC1815-Y(F) by Toshiba, a top-quality NPN Small Signal Bipolar Junction Transistor perfect for amplifier applications. With Toshiba's reputation for reliability and innovation, this transistor offers superior performance and durability. Its compact design and high DC current gain make it ideal for a wide range of projects. Experience the value and benefits of using the 2SC1815-Y(F) for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplification applications, making it versatile and widely compatible.

Configuration: SINGLE

Simplified design for easier circuit integration and troubleshooting.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Maximum Power Dissipation: 0.4 W

Withstands high power levels without overheating, ensuring reliability and longevity.

Maximum Collector Current: 0.15 A

Capable of handling moderate current levels, suitable for many small signal applications.

Nominal Transition Frequency: 80 MHz

High frequency response allows for efficient signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC1815-Y(F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC1815-Y(F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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