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2SC1815

National Semiconductor

2SC1815 by National Semiconductor

2SC1815 by National Semiconductor is a NPN BJT with max VCEsat of 0.3V, hFE of 25, and IC of 0.15A. It is used in low-power applications due to its max power dissipation of 0.4W and max operating temp of 125°C. The transistor has a max collector-emitter voltage of 50V and transition frequency of 80MHz.

Median Price

$0.232

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Verical

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Nova Conductors

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Forefront Electronics and Design

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Component Electronics Inc.

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American Microsemiconductor Inc.

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First Choice Components Inc.

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Overview

Upgrade your electronics projects with the reliable 2SC1815 NPN transistor from National Semiconductor. Known for its high quality and performance, this small signal BJT is perfect for a wide range of applications. With a low VCEsat of 0.3V, maximum collector current of 0.15A, and a minimum DC current gain of 25, this transistor offers exceptional value and benefits to customers. Trust in National Semiconductor's reputation for excellence and take your projects to the next level with the 2SC1815 transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for a variety of environments.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design and ease of integration.

Maximum VCEsat: 0.3 V

Low saturation voltage results in minimal power loss and improved efficiency.

Package Shape: ROUND

Facilitates easy mounting and soldering, making it ideal for automated assembly processes.

Terminal Form: THROUGH-HOLE

Allows for secure and stable connections to a circuit board.

Maximum Power Dissipation (Abs): 0.4 W

Can handle moderate power levels without overheating or performance degradation.

Package Style (Meter): CYLINDRICAL

Compact design that saves space and allows for high-density circuit layouts.

Minimum DC Current Gain (hFE): 25

Ensures reliable and consistent amplification of signals within the circuit.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, providing operational stability.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of voltage requirements in various applications.

Transistor Element Material: SILICON

Offers excellent performance characteristics such as high conductivity and reliability.

Maximum Collector Current (IC): 0.15 A

Sufficient current handling capability for many small signal applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Facilitates easy PCB layout and heat dissipation.

Nominal Transition Frequency (fT): 80 MHz

Enables high-speed switching and amplification of signals in RF and high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC1815 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from National Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SC1815 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-351-8132, 5961013518132

NIIN

013518132

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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