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2SC1815G

Bytesonic Electronics

2SC1815G by Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .15 A;

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< 1k

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC1815G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Bytesonic Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

2SC1815G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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