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V62/21612-01XE

Texas Instruments

V62/21612-01XE by Texas Instruments

V62/21612-01XE by Texas Instruments is an Operational Amplifier with 15uV Max Input Offset Voltage, 150dB Nominal CMRR, and 0.1V/us Min Slew Rate. Ideal for low-power applications in compact designs due to its micropower feature and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,391 parts In-Stock

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8,391

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Digiode

USA . 1,033 parts In-Stock

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1,033

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,127 parts In-Stock

1+ parts

$2.410

100+ parts

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1,127

$2.410

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Parana Technologies

USA . 1,180 parts In-Stock

1+ parts

$4.062

100+ parts

-

1k+ parts

$4.526

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1,180

$4.062

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$4.526

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One Stop Electronics

USA . 1,030 parts In-Stock

1+ parts

$4.410

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1,030

$4.410

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DigiPath Technology Company

USA . 1,467 parts In-Stock

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$4.473

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1,467

$4.473

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IDEA Electronic Components Group

UK . 370 parts In-Stock

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$4.564

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$4.108

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370

$4.564

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$4.108

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ChromeModa Solutions

Germany . 351 parts In-Stock

1+ parts

$4.564

100+ parts

$3.742

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351

$4.564

$3.742

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Semicontronic

India . 295 parts In-Stock

1+ parts

$7.410

100+ parts

$7.225

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$7.188

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295

$7.410

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$7.188

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AZTECH Wire

Italy . 394 parts In-Stock

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$17.461

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Corphita

USA . 1,525 parts In-Stock

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Corohmni

South Africa . 301 parts In-Stock

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Overview

Experience superior performance and reliability with the V62/21612-01XE operational amplifier by Texas Instruments. Built with precision and quality in mind, this advanced op amp offers unmatched value and benefits to customers across various applications. From low-offset to micropower capabilities, this compact device delivers exceptional results while maintaining a small footprint. Trust in Texas Instruments for cutting-edge technology and elevate your designs with the V62/21612-01XE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ensuring longevity and portability of the product.

Maximum Input Offset Voltage: 15 uV

Low input offset voltage ensures high accuracy in signal processing, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.02 uA

Low bias current helps in minimizing power consumption and improving overall performance efficiency.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration on circuit boards, saving space and simplifying the assembly process.

Nominal Common Mode Reject Ratio: 150 dB

High common mode rejection ratio ensures effective suppression of unwanted noise and interference, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage requirement makes this operational amplifier suitable for battery-powered devices and low-power applications.

No. of Terminals: 8

Sufficient number of terminals allow for versatile connectivity options, enabling the amplifier to be used in a variety of circuit configurations.

Minimum Slew Rate: 0.1 V/us

Fast slew rate enables rapid response to input signal changes, making this operational amplifier suitable for high-speed applications.

Maximum Supply Voltage Limit: 6 V

Wide supply voltage range provides flexibility in different operating conditions, enhancing the usability of the amplifier.

Frequency Compensation: YES

Frequency compensation feature helps in stabilizing the amplifier's performance over a range of frequencies, ensuring consistent and reliable operation.

Low-Offset: YES

Low offset voltage minimizes errors in signal processing, making this operational amplifier ideal for precision measurement and control applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Classification as an operational amplifier indicates its suitability for various signal processing tasks, such as amplification, filtering, and signal conditioning.

Micropower: YES

Micropower consumption makes this amplifier energy-efficient and suitable for battery-operated devices or low-power applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture ensures stable and predictable performance characteristics, making this amplifier reliable in critical applications.

Technical Specifications

Operational Amplifiers (Op Amps) V62/21612-01XE attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Maximum Common Mode Voltage:

40 V

Nominal Common Mode Rejection Ratio (CMRR ):

150 dB

Minimum Common Mode Rejection Ratio (CMRR ):

132 dB

Input Offset Voltage Limit:

15 uV

Minimum Slew Rate:

0.1 V/us

Nominal Slew Rate:

0.3 V/us

Peak Bias Current:

20 nA

Maximum Bias Current (IIB) @25 °C:

3 nA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

90 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

V62/21612-01XE Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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