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V62/21612-05XE

Texas Instruments

V62/21612-05XE by Texas Instruments

V62/21612-05XE by Texas Instruments is an Operational Amplifier with a Max Input Offset Voltage of 15uV, Nominal Voltage of 1.8V, and Low-Offset feature. It is suitable for applications requiring micropower consumption, such as portable electronics or sensor interfaces due to its small form factor and low bias current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,643 parts In-Stock

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Digiode

USA . 2,358 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 525 parts In-Stock

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$0.410

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525

$0.410

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Parana Technologies

USA . 1,690 parts In-Stock

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$5.007

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$464.989

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$4.506

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1,690

$5.007

$464.989

$4.506

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DigiPath Technology Company

USA . 1,458 parts In-Stock

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$5.513

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$5.072

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$5.513

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ChromeModa Solutions

Germany . 5,435 parts In-Stock

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$5.626

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$4.613

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5,435

$5.626

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IDEA Electronic Components Group

UK . 1,866 parts In-Stock

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$5.626

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$5.063

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1,866

$5.626

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$5.063

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Semicontronic

India . 997 parts In-Stock

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$8.410

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$8.200

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$8.158

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997

$8.410

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$8.158

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AZTECH Wire

Italy . 867 parts In-Stock

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$8.766

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Corphita

USA . 4,213 parts In-Stock

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Corohmni

South Africa . 245 parts In-Stock

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Overview

Texas Instruments INA190/INA190-Q1 Current-Shunt Monitors provide overcurrent protection and precision current measurement for system optimization or in closed-loop feedback circuits. These voltage-output monitors can sense drops across shunts at common-mode voltages from –0.2V to +40V, independent of the supply voltage. The INA190/INA190-Q1 features five fixed gain options of 25V/V, 50V/V, 100V/V, 200V/V, or 500V/V. The INA190/INA190-Q1 offers a low input bias current, permitting the use of larger current-sense resistors. This allows accurate, current measurements in the microamp range.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and cost-effective, while still providing durability.

Maximum Input Offset Voltage: 15 uV

Low input offset voltage ensures accurate signal processing and minimal error in the output signal.

Maximum Average Bias Current (IIB): 0.02 uA

Low bias current results in minimal power consumption and reduced noise in the signal output.

Surface Mount: YES

Surface mount capability makes for easy and efficient integration onto circuit boards.

Nominal Common Mode Reject Ratio: 150 dB

High common mode rejection ratio ensures that unwanted noise and interference are minimized in the output signal.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently with a low supply voltage, suitable for battery-powered applications.

No. of Terminals: 8

A sufficient number of terminals for connecting to external components and interfacing with the rest of the circuit.

Minimum Slew Rate: 0.1 V/us

Fast slew rate allows for quick response to input signal changes, making it suitable for high-frequency applications.

Maximum Supply Voltage Limit: 6 V

Operates within a safe voltage range, ensuring long-term reliability and preventing damage due to overvoltage.

Frequency Compensation: YES

Frequency compensation ensures stability and optimal performance across a wide range of operating frequencies.

Technical Specifications

Operational Amplifiers (Op Amps) V62/21612-05XE attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Maximum Common Mode Voltage:

40 V

Nominal Common Mode Rejection Ratio (CMRR ):

150 dB

Minimum Common Mode Rejection Ratio (CMRR ):

132 dB

Input Offset Voltage Limit:

15 uV

Minimum Slew Rate:

0.1 V/us

Nominal Slew Rate:

0.3 V/us

Peak Bias Current:

20 nA

Maximum Bias Current (IIB) @25 °C:

3 nA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

90 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

V62/21612-05XE Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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