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V62/21615-01XE

Texas Instruments

V62/21615-01XE by Texas Instruments

V62/21615-01XE by Texas Instruments is a 4-function operational amplifier with low-offset and low-bias features. It has a max input offset voltage of 895uV, nominal voltage of 4V, and nominal unity gain bandwidth of 4500kHz. Ideal for applications requiring precise signal amplification in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,620 parts In-Stock

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7,620

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Digiode

USA . 1,543 parts In-Stock

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1,543

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 513 parts In-Stock

1+ parts

$0.410

100+ parts

$0.400

1k+ parts

$0.398

10k+ parts

-

513

$0.410

$0.400

$0.398

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One Stop Electronics

USA . 199 parts In-Stock

1+ parts

$4.410

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199

$4.410

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AZTECH Wire

Italy . 856 parts In-Stock

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$6.555

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856

$6.555

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Ampacity Inc.

Singapore . 1,058 parts In-Stock

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$9.410

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1,058

$9.410

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Component Stockers USA

USA . 1,701 parts In-Stock

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$65.440

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1,701

$65.440

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Corphita

USA . 4,702 parts In-Stock

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4,702

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Corohmni

South Africa . 237 parts In-Stock

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237

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Overview

Discover the V62/21615-01XE by Texas Instruments, a high-quality Operational Amplifier designed to deliver superior performance in a compact package. With 4 functions packed into a small outline, thin profile body, this amplifier offers micropower consumption and low-offset for efficient operation. Ideal for a wide range of applications, from audio equipment to industrial control systems, the V62/21615-01XE provides unparalleled reliability and precision. Trust Texas Instruments for innovative solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the operational amplifier lightweight and cost-effective.

Maximum Input Offset Voltage: 895 uV

The low input offset voltage ensures accurate and precise signal processing in the operational amplifier.

Surface Mount: YES

The surface mount feature makes the installation of the operational amplifier easy and efficient.

Nominal Common Mode Reject Ratio: 130 dB

A high common mode reject ratio ensures minimal interference from external noise, resulting in clean and accurate output signals.

Nominal Supply Voltage: 4V

Operates at a nominal supply voltage of 4V, making it suitable for low power consumption applications.

Maximum Supply Voltage Limit: 42V

With a maximum supply voltage limit of 42V, this operational amplifier can handle higher voltage requirements in various applications.

Minimum Voltage Gain: 112201.84

The high minimum voltage gain ensures optimal amplification of input signals in the operational amplifier.

Nominal Unity Gain Bandwidth: 4500 kHz

A high unity gain bandwidth ensures that the operational amplifier can handle high-frequency signals effectively.

Maximum Supply Current: 3 mA

The low maximum supply current makes this operational amplifier energy-efficient and suitable for battery-operated devices.

Technical Specifications

Operational Amplifiers (Op Amps) V62/21615-01XE attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

4

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Minimum Common Mode Rejection Ratio (CMRR ):

107 dB

Input Offset Voltage Limit:

895 uV

Minimum Voltage Gain:

112201.84

Nominal Slew Rate:

21 V/us

Operational Characteristics

Nominal Supply Voltage:

4 V

Maximum Supply Voltage:

42 V

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.165 in (4.2 mm)

Width:

0.079 in (2 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

14

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.14,20

Trade Compliance

V62/21615-01XE Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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