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UCC23511BDWY

Texas Instruments

UCC23511BDWY by Texas Instruments

UCC23511BDWY by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and output current of 1A. It operates in automotive-grade temperatures from -40 to 125°C, making it suitable for various automotive applications. With push-pull output characteristics, this driver offers fast turn-on and turn-off times of 0.105 us, ideal for driving IGBTs and MOSFETs efficiently.

Median Price

$1.870

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 41,148 parts In-Stock

1+ parts

$1.870

100+ parts

-

1k+ parts

-

10k+ parts

-

41,148

$1.870

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,690 parts In-Stock

1+ parts

$1.776

100+ parts

-

1k+ parts

-

10k+ parts

-

2,690

$1.776

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-

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Vyrian

USA . 9,647 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,647

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,130 parts In-Stock

1+ parts

$1.683

100+ parts

-

1k+ parts

-

10k+ parts

-

2,130

$1.683

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-

-

Parana Technologies

USA . 496 parts In-Stock

1+ parts

$4.136

100+ parts

-

1k+ parts

$4.585

10k+ parts

-

496

$4.136

-

$4.585

-

DigiPath Technology Company

USA . 2,127 parts In-Stock

1+ parts

$4.554

100+ parts

-

1k+ parts

-

10k+ parts

-

2,127

$4.554

-

-

-

ChromeModa Solutions

Germany . 3,625 parts In-Stock

1+ parts

$4.647

100+ parts

$3.811

1k+ parts

-

10k+ parts

-

3,625

$4.647

$3.811

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IDEA Electronic Components Group

UK . 1,805 parts In-Stock

1+ parts

$4.647

100+ parts

-

1k+ parts

$4.182

10k+ parts

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1,805

$4.647

-

$4.182

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AZTECH Wire

Italy . 984 parts In-Stock

1+ parts

$16.680

100+ parts

-

1k+ parts

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10k+ parts

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984

$16.680

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Overview

Enhance the performance of your MOSFET systems with the UCC23511BDWY from Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers high-quality products designed for automotive applications. This MOSFET gate driver offers a true output polarity, push-pull characteristics, and a small outline package style for easy integration. With a maximum output current of 1A and a wide temperature range, this driver provides reliable and efficient operation. Upgrade your electronic systems today with the UCC23511BDWY and experience enhanced performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides an affordable and lightweight design for easy integration into various applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and cost.

Maximum Supply Voltage-1: 33 V

Supports a wide range of voltage requirements for versatile use in different circuits.

No. of Terminals: 6

Provides sufficient connectivity options for interfacing with other components in a circuit.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments.

Output Characteristics: PUSH-PULL

Provides both sourcing and sinking current capabilities for driving MOSFETs efficiently.

Maximum Output Current: 1 A

Can drive moderate loads with ease, making it suitable for a wide range of applications.

Technical Specifications

MOSFET Gate Drivers UCC23511BDWY attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

7.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Maximum Output Current:

1 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP6,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

3.55 mm

Maximum Supply Current:

2.2 mA

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

10 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.105 us

Turn-on Time:

.105 us

Width:

4.68 mm

Trade Compliance

UCC23511BDWY Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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