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TS5A3359DCURG4

Texas Instruments

TS5A3359DCURG4 by Texas Instruments

TS5A3359DCURG4 by Texas Instruments is an 8-terminal single-ended multiplexer with a 1.8/5 V power supply, 0.0012 mA max supply current, and 64 dB nominal off-state isolation. It operates in industrial temperature grade range (-40 to 85 °C) and has a compact package style for space-constrained applications.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 32,120 parts In-Stock

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Vyrian

USA . 7,499 parts In-Stock

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Digiode

USA . 3,507 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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One Stop Electronics

USA . 284 parts In-Stock

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$1.500

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$1.500

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Semicontronic

India . 1,179 parts In-Stock

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$2.500

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$2.438

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$2.425

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Parana Technologies

USA . 1,501 parts In-Stock

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$7.279

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$7.779

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Ampacity Inc.

Singapore . 1,210 parts In-Stock

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$7.500

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DigiPath Technology Company

USA . 329 parts In-Stock

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$8.015

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$7.374

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ChromeModa Solutions

Germany . 3,576 parts In-Stock

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$8.179

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$6.707

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IDEA Electronic Components Group

UK . 609 parts In-Stock

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Corohmni

South Africa . 177 parts In-Stock

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AZTECH Wire

Italy . 868 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,643 parts In-Stock

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Continental Prestige Electronics

USA . 5,911 parts In-Stock

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Corphita

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Microchip USA

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Argo Parts USA

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Bastille Electronics

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Overview

Upgrade your electronic devices with the TS5A3359DCURG4 from Texas Instruments, a leading manufacturer known for top-quality components. This multiplexer switch offers seamless switching between different channels, making it perfect for applications in audio equipment, communication systems, and more. With its reliable performance and compact design, this product provides value and convenience to customers looking for efficiency and innovation in their projects. Experience the benefits of superior technology with Texas Instruments' TS5A3359DCURG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and lightweight housing for the multiplexer, making it suitable for various applications.

Surface Mount: YES

Allows for easy and efficient installation onto circuit boards, saving installation time and cost.

Nominal Supply Voltage (Vsup): 1.8 V

Operates efficiently at a low voltage, ideal for applications where power consumption is a concern.

No. of Channels: 3

Offers the ability to switch between multiple channels, increasing versatility in signal routing and management.

Maximum Operating Temperature: 85 °C

Ensures reliability and performance in a wide range of operating environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance, ensuring long-term reliability and signal integrity.

Maximum Supply Current (Isup): 0.0012 mA

Consumes minimal power during operation, making it energy-efficient and suitable for battery-powered devices.

Technical Specifications

Multiplexers & Switches TS5A3359DCURG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

1.65 V

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NO

No. of Channels:

3

No. of Functions:

1

No. of Terminals:

8

Nominal Off-state Isolation:

64 dB

Nominal On-state Resistance Match:

.15 ohm

Maximum On-state Resistance (Ron):

2.5 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.0012 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Maximum Switch-off Time:

16 ns

Maximum Switch-on Time:

85 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2 mm

Trade Compliance

TS5A3359DCURG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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