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TS5A3357DCUTE4

Texas Instruments

TS5A3357DCUTE4 by Texas Instruments

TS5A3357DCUTE4 by Texas Instruments is an 8-terminal single-ended multiplexer with a max on-state resistance of 50 ohm. Operating at industrial temperature grade, it offers 3 channels and a nominal voltage range of 1.65V to 5.5V. Ideal for applications requiring high isolation and fast switching times in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,948 parts In-Stock

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Digiode

USA . 2,114 parts In-Stock

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2,114

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,315 parts In-Stock

1+ parts

$2.500

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1,315

$2.500

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Semicontronic

India . 890 parts In-Stock

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$4.500

100+ parts

$4.388

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$4.365

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890

$4.500

$4.388

$4.365

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One Stop Electronics

USA . 1,519 parts In-Stock

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$5.500

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1,519

$5.500

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AZTECH Wire

Italy . 560 parts In-Stock

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$7.868

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560

$7.868

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Parana Technologies

USA . 998 parts In-Stock

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$9.511

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$10.110

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998

$9.511

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$10.110

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DigiPath Technology Company

USA . 1,718 parts In-Stock

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$10.472

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$9.634

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1,718

$10.472

$9.634

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ChromeModa Solutions

Germany . 3,250 parts In-Stock

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$10.686

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$8.763

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3,250

$10.686

$8.763

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IDEA Electronic Components Group

UK . 84 parts In-Stock

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$10.686

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$10.152

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$9.617

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84

$10.686

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$9.617

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Corphita

USA . 1,665 parts In-Stock

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Microchip USA

USA . 402 parts In-Stock

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Corohmni

South Africa . 166 parts In-Stock

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Overview

Upgrade your electronics with the TS5A3357DCUTE4 from Texas Instruments, a top-quality multiplexer and switch designed to enhance performance and reliability. With a wide operating temperature range and superior nickel palladium gold terminal finish, this compact device is perfect for industrial applications where precision and durability are essential. Experience seamless switching with minimal on-state resistance and fast response times, ensuring optimal functionality in your circuit design. Trust in Texas Instruments' reputation for excellence and choose the TS5A3357DCUTE4 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the product easy to handle and affordable.

Nominal Supply Voltage (Vsup): 1.8 V

Lower supply voltage helps in reducing power consumption and increasing energy efficiency.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and ensure reliable performance.

No. of Channels: 3

Having multiple channels allows for more inputs to be connected simultaneously, increasing the versatility of the product.

Nominal Off-state Isolation: 81 dB

High off-state isolation ensures that unwanted signals or interference are minimized, resulting in better signal integrity.

Technical Specifications

Multiplexers & Switches TS5A3357DCUTE4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

3

No. of Functions:

1

No. of Terminals:

8

Nominal Off-state Isolation:

81 dB

Nominal On-state Resistance Match:

.3 ohm

Maximum On-state Resistance (Ron):

50 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Maximum Switch-off Time:

14 ns

Maximum Switch-on Time:

32 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2 mm

Trade Compliance

TS5A3357DCUTE4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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