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TPS659114A2ZRCT

Texas Instruments

TPS659114A2ZRCT by Texas Instruments

TPS659114A2ZRCT by Texas Instruments is a Power Management IC with 98 terminals, operating at -40 to 85 °C. It features a max switching frequency of 3300 kHz and is ideal for industrial applications requiring power supply management circuits. The IC has a package style of GRID ARRAY, terminal finish of TIN SILVER COPPER, and nominal voltage of 3.8 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,187 parts In-Stock

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Digiode

USA . 1,963 parts In-Stock

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1,963

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Distributors (Availability)

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Semicontronic

India . 616 parts In-Stock

1+ parts

$0.500

100+ parts

$0.488

1k+ parts

$0.485

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616

$0.500

$0.488

$0.485

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One Stop Electronics

USA . 1,327 parts In-Stock

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$2.500

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$2.500

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Ampacity Inc.

Singapore . 861 parts In-Stock

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$5.500

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861

$5.500

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Parana Technologies

USA . 412 parts In-Stock

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$6.599

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$7.336

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412

$6.599

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$7.336

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DigiPath Technology Company

USA . 1,976 parts In-Stock

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$7.267

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1,976

$7.267

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ChromeModa Solutions

Germany . 2,214 parts In-Stock

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$7.415

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$6.080

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2,214

$7.415

$6.080

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IDEA Electronic Components Group

UK . 2,060 parts In-Stock

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$7.415

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$6.674

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2,060

$7.415

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$6.674

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AZTECH Wire

Italy . 883 parts In-Stock

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$9.661

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883

$9.661

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Corphita

USA . 2,357 parts In-Stock

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2,357

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Corohmni

South Africa . 353 parts In-Stock

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Microchip USA

USA . 296 parts In-Stock

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Overview

Unlock the power of efficient energy management with the TPS659114A2ZRCT by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their Power Management ICs. This versatile product is perfect for a wide range of applications, offering customers unparalleled value and benefits. Say goodbye to worrying about power supply management with the TPS659114A2ZRCT - your solution for seamless performance and increased efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards.

Nominal Supply Voltage (Vsup): 3.8 V

Stable nominal supply voltage ensures consistent performance.

No. of Terminals: 98

High number of terminals enable the IC to connect with multiple components efficiently.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliability in various environments.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperatures expands the range of applications.

Maximum Seated Height: 1 mm

Low seated height saves space in electronic devices.

Nominal Threshold Voltage (V): +2.1V

Accurate threshold voltage ensures precise control over power management.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating guarantees durability and performance in challenging conditions.

Maximum Switching Frequency: 3300 kHz

High switching frequency allows for fast and efficient power management operations.

Technical Specifications

Power Management ICs TPS659114A2ZRCT attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

13

No. of Functions:

1

No. of Outputs:

13

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA98,8X13,25

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3300 kHz

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Nominal Threshold Voltage (V):

+2.1V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

TPS659114A2ZRCT Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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