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TPS6591131A2ZRCR

Texas Instruments

TPS6591131A2ZRCR by Texas Instruments

TPS6591131A2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, operating at -40 to 85°C. It has a supply voltage range of 2.7V to 5.5V and offers 13 channels with a max switching frequency of 3300 kHz. Ideal for power supply management circuits in various applications due to its adjustable threshold feature and compact rectangular package design.

Median Price

$8.960

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 440 parts In-Stock

1+ parts

$8.960

100+ parts

$3.882

1k+ parts

$3.674

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440

$8.960

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$3.674

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Vyrian

USA . 3,466 parts In-Stock

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Digiode

USA . 1,023 parts In-Stock

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1,023

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Distributors (Availability)

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Semicontronic

India . 675 parts In-Stock

1+ parts

$0.500

100+ parts

$0.488

1k+ parts

$0.485

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675

$0.500

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$0.485

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One Stop Electronics

USA . 803 parts In-Stock

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$2.500

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803

$2.500

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AZTECH Wire

Italy . 707 parts In-Stock

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$15.623

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707

$15.623

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Corphita

USA . 4,977 parts In-Stock

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Microchip USA

USA . 358 parts In-Stock

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Corohmni

South Africa . 70 parts In-Stock

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Overview

Enhance your power management system with the TPS6591131A2ZRCR by Texas Instruments. With a reputation for innovation and reliability, Texas Instruments delivers top-quality Power Management ICs like this one, perfect for a wide range of applications. Experience seamless integration, efficient performance, and reliable power supply management with this versatile product. Trust Texas Instruments to provide you with cutting-edge technology that meets your needs while exceeding your expectations. Choose the TPS6591131A2ZRCR for unparalleled value and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the components inside, ensuring reliable performance.

Surface Mount: YES

Easy installation on PCBs, saving assembly time and making it suitable for automated manufacturing processes.

Nominal Supply Voltage (Vsup): 3.8 V

Optimal voltage level for efficient power management and operation of connected devices.

No. of Terminals: 98

Sufficient number of terminals for connecting multiple devices and components, offering versatility in application.

Maximum Operating Temperature: 85 °C

High temperature tolerance for reliable performance in varying environmental conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold environments without compromising performance.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Provides excellent conductivity and corrosion resistance for long-lasting connections.

No. of Channels: 13

Multiple channels allow for simultaneous management of multiple power sources or outputs, enhancing efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

Wide supply voltage range accommodates various power sources, making it adaptable to different systems.

Adjustable Threshold: YES

Allows for customization of voltage thresholds, enabling precise control and optimization of power management.

Technical Specifications

Power Management ICs TPS6591131A2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

13

No. of Functions:

1

No. of Outputs:

13

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA98,8X13,25

Package Shape:

Package Style (Meter):

GRID ARRAY

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3300 kHz

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Nominal Threshold Voltage (V):

+2.1V

Width (mm):

6 mm

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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