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TPS6591103A2ZRCR

Texas Instruments

TPS6591103A2ZRCR by Texas Instruments

TPS6591103A2ZRCR by Texas Instruments is a Power Management IC with 98 terminals, Vsup range of 2.7-5.5V, and max output voltage of 3.3V. It is used in industrial applications requiring a compact GRID ARRAY package with very thin profile and fine pitch for power supply management circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,885 parts In-Stock

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Digiode

USA . 631 parts In-Stock

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631

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,455 parts In-Stock

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$2.500

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1,455

$2.500

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One Stop Electronics

USA . 1,401 parts In-Stock

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$3.500

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$3.500

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Semicontronic

India . 1,257 parts In-Stock

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$3.500

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$3.412

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$3.395

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1,257

$3.500

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$3.395

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AZTECH Wire

Italy . 736 parts In-Stock

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$18.669

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736

$18.669

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Parana Technologies

USA . 227 parts In-Stock

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$20.021

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$19.955

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227

$20.021

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$19.955

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ChromeModa Solutions

Germany . 3,854 parts In-Stock

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$22.496

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$18.447

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3,854

$22.496

$18.447

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IDEA Electronic Components Group

UK . 1,137 parts In-Stock

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$22.496

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$21.371

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$20.246

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1,137

$22.496

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Component Stockers USA

USA . 552 parts In-Stock

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$99.990

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552

$99.990

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DigiPath Technology Company

USA . 1,499 parts In-Stock

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$20.282

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$20.282

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Corphita

USA . 1,189 parts In-Stock

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Microchip USA

USA . 456 parts In-Stock

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456

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Corohmni

South Africa . 320 parts In-Stock

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Overview

Experience unparalleled power management with the TPS6591103A2ZRCR by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch quality and reliability in every product. The TPS6591103A2ZRCR falls under the category of Power Management ICs and is perfect for a wide range of applications. With its advanced features and innovative design, this IC offers customers exceptional value, efficiency, and performance. Say goodbye to power-related issues and embrace seamless power management with the TPS6591103A2ZRCR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the Power Management IC.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage (Vsup): 3.8 V

Optimal voltage for powering the Power Management IC efficiently.

No. of Terminals: 98

Offers multiple connection points for various functions and features.

Maximum Operating Temperature: 85 °C

Can handle high temperatures without compromising performance.

Maximum Output Voltage: 3.3 V

Provides stable and reliable output voltage for connected devices.

Minimum Supply Voltage (Vsup): 2.7 V

Allows flexibility in input voltage range for different applications.

Maximum Switching Frequency: 3000 kHz

Facilitates fast switching between power modes for efficient performance.

Adjustable Threshold: YES

Allows for customization of threshold levels based on specific requirements.

Technical Specifications

Power Management ICs TPS6591103A2ZRCR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

ALSO OPER FROM SUP VOL 1.7 TO 5.5 V AND 1.4 TO 3.6 V; THRESHOLD VOL ARE 3.5V, 3.45V, 2.55V AND 2.5V

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B98

JESD-609 Code:

e1

Length:

9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

98

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current (Isup):

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

3000 kHz

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

TPS6591103A2ZRCR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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