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TPS65820RSHTG4

Texas Instruments

TPS65820RSHTG4 by Texas Instruments

TPS65820RSHTG4 by Texas Instruments is a Power Management IC with 56 terminals, operating b/w -40 to 85 °C. It supports 8 channels, has a supply voltage range of 4.35-16.5V, and features adjustable threshold levels. Ideal for industrial applications requiring power supply support circuits in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,702 parts In-Stock

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Chip Stock

USA . 4,260 parts In-Stock

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Vyrian

USA . 3,255 parts In-Stock

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One Stop Electronics

USA . 1,339 parts In-Stock

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$3.500

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$3.500

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Semicontronic

India . 1,375 parts In-Stock

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$5.500

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$5.362

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$5.335

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$5.500

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Ampacity Inc.

Singapore . 1,098 parts In-Stock

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$6.500

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Parana Technologies

USA . 439 parts In-Stock

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$15.891

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$16.246

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439

$15.891

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$16.246

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DigiPath Technology Company

USA . 1,794 parts In-Stock

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$17.498

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$16.098

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$17.498

$16.098

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IDEA Electronic Components Group

UK . 1,525 parts In-Stock

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$17.855

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$16.962

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$16.070

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$17.855

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$16.070

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ChromeModa Solutions

Germany . 799 parts In-Stock

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$17.855

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$14.641

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799

$17.855

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AZTECH Wire

Italy . 297 parts In-Stock

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Corphita

USA . 2,690 parts In-Stock

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Kepictronics

USA . 2,652 parts In-Stock

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Corohmni

South Africa . 465 parts In-Stock

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Microchip USA

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Overview

Enhance your power management solutions with the TPS65820RSHTG4 by Texas Instruments, a high-quality Power Management IC that offers unmatched reliability and performance. Manufactured by industry leader Texas Instruments, this versatile chip supports a wide range of applications. With its compact design and advanced features, the TPS65820RSHTG4 provides customers with exceptional value, efficiency, and flexibility. Say goodbye to power supply issues and experience seamless operation with this cutting-edge product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and is cost-effective, making the product more affordable.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Power Supplies (V): 4.3/16

Can handle a wide range of power supply voltages, making it versatile for different applications.

No. of Terminals: 56

Provides ample connectivity options for various components and peripherals, enhancing versatility.

Maximum Operating Temperature: 85 °C

Can operate reliably in high-temperature conditions, improving overall performance and durability.

Minimum Operating Temperature: -40 °C

Can function in low-temperature environments, ensuring consistent operation in various settings.

Terminal Finish: NICKEL PALLADIUM GOLD

Offers excellent conductivity and corrosion resistance, enhancing the longevity and reliability of the product.

Width (mm): 7 mm

Compact size makes it suitable for applications with limited space, allowing for more flexible installation.

Minimum Supply Voltage (Vsup): 4.35 V

Can operate efficiently with low supply voltages, making it energy-efficient and suitable for battery-powered devices.

Maximum Supply Voltage (Vsup): 16.5 V

Capable of handling high supply voltages, ensuring compatibility with a wide range of power sources.

Adjustable Threshold: YES

Allows for customization of voltage thresholds, making it adaptable to different system requirements.

Technical Specifications

Power Management ICs TPS65820RSHTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PQCC-N56

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

56

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC56,.27SQ,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.3/16

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

16.5 V

Minimum Supply Voltage (Vsup):

4.35 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7 mm

Trade Compliance

TPS65820RSHTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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