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TPS3801T50DCKRG4

Texas Instruments

TPS3801T50DCKRG4 by Texas Instruments

TPS3801T50DCKRG4 by Texas Instruments is a Power Management IC with 3.3V nominal voltage, 5 terminals, and -40 to 85°C operating temperature range. It is used in industrial applications for power supply support circuits due to its compact size and low supply current of 0.025 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,422 parts In-Stock

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Digiode

USA . 2,823 parts In-Stock

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One Stop Electronics

USA . 1,024 parts In-Stock

1+ parts

$0.500

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1,024

$0.500

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Ampacity Inc.

Singapore . 426 parts In-Stock

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$0.500

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426

$0.500

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Semicontronic

India . 736 parts In-Stock

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$4.500

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$4.388

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$4.365

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736

$4.500

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$4.365

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Parana Technologies

USA . 2,097 parts In-Stock

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$5.613

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$6.410

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DigiPath Technology Company

USA . 299 parts In-Stock

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$6.181

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$5.686

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299

$6.181

$5.686

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ChromeModa Solutions

Germany . 6,441 parts In-Stock

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$6.307

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$5.172

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IDEA Electronic Components Group

UK . 1,008 parts In-Stock

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$6.307

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$5.676

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AZTECH Wire

Italy . 678 parts In-Stock

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$15.064

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Corphita

USA . 3,128 parts In-Stock

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Microchip USA

USA . 2,046 parts In-Stock

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Corohmni

South Africa . 281 parts In-Stock

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Kepictronics

USA . 90 parts In-Stock

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Overview

Elevate your power management system with the TPS3801T50DCKRG4 from Texas Instruments. Crafted with precision and expertise by a renowned manufacturer in the industry, this Power Management IC offers unparalleled reliability and performance. Ideal for a wide range of applications, this compact and innovative device provides customers with exceptional value and benefits. Say goodbye to power supply issues and hello to seamless operations with the TPS3801T50DCKRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective, lightweight, and durable, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Supply Voltage (Vsup): 3.3 V

The product operates efficiently at 3.3V, which is a common supply voltage in many electronic devices, ensuring compatibility.

No. of Terminals: 5

Having a compact design with 5 terminals allows for space-efficient integration into electronic systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand challenging environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The product can operate in extremely low temperatures, making it suitable for a wide range of industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall efficiency and reliability of the product.

Technical Specifications

Power Management ICs TPS3801T50DCKRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 4 V; POWER ON RESET GENERATOR; MANUAL RESET INPUT

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.025 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.25 mm

Trade Compliance

TPS3801T50DCKRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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