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TPS3801-01DCKRG4

Texas Instruments

TPS3801-01DCKRG4 by Texas Instruments

TPS3801-01DCKRG4 by Texas Instruments is a Power Management IC with 5 terminals, operating at -40 to 85 °C. It has a supply voltage range of 1.6V to 4V and features an adjustable threshold of +1.14V, suitable for industrial applications requiring low supply current (0.012 mA).

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 17,170 parts In-Stock

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Vyrian

USA . 6,590 parts In-Stock

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6,590

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Digiode

USA . 4,436 parts In-Stock

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4,436

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NPI Materials, Inc.

USA . 3,000 parts In-Stock

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Semi Source

USA . 373 parts In-Stock

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373

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Nova Conductors

Japan . 32 parts In-Stock

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Ampacity Inc.

Singapore . 1,244 parts In-Stock

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$4.500

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One Stop Electronics

USA . 1,368 parts In-Stock

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$7.500

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AZTECH Wire

Italy . 412 parts In-Stock

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$8.840

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Parana Technologies

USA . 2,312 parts In-Stock

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$10.296

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$10.823

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$10.823

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DigiPath Technology Company

USA . 1,321 parts In-Stock

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$11.338

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ChromeModa Solutions

Germany . 3,724 parts In-Stock

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$11.569

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$9.487

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IDEA Electronic Components Group

UK . 372 parts In-Stock

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$11.569

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$10.991

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$10.412

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372

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Component Stockers USA

USA . 288 parts In-Stock

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$99.990

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Microchip USA

USA . 2,258 parts In-Stock

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Corphita

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Argo Parts USA

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Kepictronics

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A-Z Elektronik GmbH

Germany . 408 parts In-Stock

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Continental Prestige Electronics

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Aranea Global

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Overview

Discover the TPS3801-01DCKRG4 by Texas Instruments, a top-quality Power Management IC that offers unparalleled reliability and performance. With a wide range of applications in various industries, this product provides customers with exceptional value and benefits. Manufactured by Texas Instruments, known for their cutting-edge technology and superior products, the TPS3801-01DCKRG4 is a game-changer in the field of power management. Experience the advantages of this innovative IC and take your projects to the next level with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IC, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and enabling automated manufacturing processes.

Nominal Supply Voltage (Vsup): 3.3 V

Ideal voltage for many electronic devices, ensuring compatibility with a wide range of applications.

No. of Terminals: 5

Optimal number of terminals for connecting to external components, providing flexibility and functionality.

Maximum Operating Temperature: 85 °C

Can operate effectively in high-temperature environments, making it suitable for industrial applications.

Technology: CMOS

Utilizes CMOS technology for efficient power management and low power consumption, contributing to energy efficiency.

Adjustable Threshold: YES

Allows for customization of voltage thresholds, enabling precise control and optimization of power management.

Technical Specifications

Power Management ICs TPS3801-01DCKRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

POWER ON RESET GENERATOR

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.6/4

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.012 mA

Maximum Supply Voltage (Vsup):

4 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.14V

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.25 mm

Trade Compliance

TPS3801-01DCKRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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