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TPS3124G15DBVTG4

Texas Instruments

TPS3124G15DBVTG4 by Texas Instruments

TPS3124G15DBVTG4 by Texas Instruments is a Power Management IC with 1.5V nominal voltage, 5 terminals, and 0.03mA max supply current. It is used in industrial applications for power supply management circuits due to its small outline package and wide operating temperature range of -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,368 parts In-Stock

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Digiode

USA . 2,498 parts In-Stock

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One Stop Electronics

USA . 601 parts In-Stock

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$0.500

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601

$0.500

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Semicontronic

India . 739 parts In-Stock

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$2.500

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$2.438

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$2.425

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739

$2.500

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$2.425

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Ampacity Inc.

Singapore . 1,550 parts In-Stock

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$6.500

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Parana Technologies

USA . 1,017 parts In-Stock

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$7.991

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$8.570

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DigiPath Technology Company

USA . 1,284 parts In-Stock

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$8.799

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$8.799

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ChromeModa Solutions

Germany . 3,428 parts In-Stock

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$8.979

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$7.363

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$8.979

$7.363

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IDEA Electronic Components Group

UK . 438 parts In-Stock

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$8.979

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$8.530

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$8.081

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438

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AZTECH Wire

Italy . 270 parts In-Stock

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$17.653

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Component Stockers USA

USA . 247 parts In-Stock

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$99.990

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Corphita

USA . 4,007 parts In-Stock

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Corohmni

South Africa . 319 parts In-Stock

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Microchip USA

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the TPS3124G15DBVTG4 Power Management IC. This small outline, low profile package offers a wide range of applications in power supply management circuits, providing customers with a versatile and efficient solution for their projects. With a nominal supply voltage of 1.5V and a temperature grade of industrial, this IC is designed to deliver top performance even in challenging conditions. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the product easy to handle and affordable.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Nominal Supply Voltage (Vsup): 1.5 V

Suitable for applications requiring a stable 1.5V supply voltage, ensuring consistent performance.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold temperatures, making it suitable for use in various environments.

Width (mm): 1.6 mm

Compact width allows for space-saving integration into electronic devices.

Maximum Supply Voltage (Vsup): 3.3 V

Supports a wide range of supply voltages, providing flexibility in design and compatibility with different systems.

Technical Specifications

Power Management ICs TPS3124G15DBVTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

POWER-ON RESET GENERATOR

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

Length:

2.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.5

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.03 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

.85 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.6 mm

Trade Compliance

TPS3124G15DBVTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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